IRG7CH73UEF-R Allicdata Electronics
Allicdata Part #:

IRG7CH73UEF-R-ND

Manufacturer Part#:

IRG7CH73UEF-R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT 1200V Surface Mount Die
DataSheet: IRG7CH73UEF-R datasheetIRG7CH73UEF-R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Switching Energy: --
Input Type: Standard
Gate Charge: 540nC
Td (on/off) @ 25°C: 90ns/580ns
Test Condition: 600V, 75A, 5 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The IRG7CH73UEF-R is a single IGBT transistor developed by International Rectifier Corporation. It is a high-power, high-temperature, insulated gate bi-polarth transistor (IGBT) designed for use in power inverters, industrial switching applications, motor drives, uninterruptible power supplies, and inverter systems. The IRG7CH73UEF-R has a wide range of features, including a high current output capability, high voltage on/off features, and wide operating temperature range.

The IRG7CH73UEF-R operates in an efficient, low loss mode at medium to high switching frequencies while at the same time providing significant output power performance. The transistor’s low surge voltage is ideal for protection applications. It is designed to be robust and reliable in the most challenging conditions. The IRG7CH73UEF-R features an advanced architecture that maximizes device performance and protects against a wide range of common power problems.

The IRG7CH73UEF-R incorporates a hybrid MOS structure with both N-type and P-type channels. This allows it to interface with both logic-level and high voltage signals. As a result, the IRG7CH73UEF-R provides increased robustness and better performance than traditional IGBTs. The device also features advanced self-health checks and is designed to detect and correct most power problems while providing improved system reliability.

The IRG7CH73UEF-R operates in the on-off state. When turned on the transistor produces an output current and the current is proportional to the voltage applied. When turned off, the transistor does not conduct. The current through the transistor is determined by the voltage applied and the transistor\'s turn-on threshold, which is typically around 100V. The turn-off threshold is typically around 150V.

Because of its wide temperature range and low on-resistance, the IRG7CH73UEF-R is commonly used in power inverters, industrial switching devices, motor drives, uninterruptible power supplies, and many other applications. The IGBT’s rugged construction, along with its low-temperature and high-power capabilities, makes it ideal for challenging applications. The IRG7CH73UEF-R offers excellent protection features, including high voltage surge protection and reverse-current protection. Additionally, the IRG7CH73UEF-R is designed to be highly reliable and is capable of working well in the most demanding applications.

The specific data is subject to PDF, and the above content is for reference

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