Allicdata Part #: | IRG7PK42UD1PBF-ND |
Manufacturer Part#: |
IRG7PK42UD1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V DIE |
More Detail: | IGBT |
DataSheet: | IRG7PK42UD1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | * |
Part Status: | Obsolete |
Description
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Introduction to IRG7PK42UD1PBF
IRG7PK42UD1PBF is an integrated gate bipolar transistor (IGBT) that belongs to a series of transistors from Vishay Intertechnology. This transistor is a power electronic device that combines the function of a MOSFET and a bipolar transistor. It is composed of three layers of semiconductor materials: an n-type body, a p-doped control layer, and a p-type collector. It is suitable for audio, automotive, consumer, industrial and power drive applications.Application Fields of IRG7PK42UD1PBF
IRG7PK42UD1PBF is suitable for high-power switching applications, motor controls, and frequency converters. In addition, this IGBT is suitable for applications that require high frequency applications such as welding, medical equipment and momentary high power discharge. Its power output up to 1.2kW and 500V application level make it a suitable choice for induction cooking and heavy machinery.Working Principle of IRG7PK42UD1PBF
The IRG7PK42UD1PBF works by having the input signal connected to the gate terminal and the load connected to the collector. When the gate voltage is applied, the n-type body and p-doped layer are switched on and creates multiple paths for the current to flow between the collector and emitter. The transistor performs as a switch with the output voltage being proportional to the gate voltage input.When the gate voltage reaches the threshold, the transistor is turned on. When the gate voltage is positive the current flows from the collector to the emitter and the output is low. When the gate voltage is negative the current flows form the emitter to the collector and the output is high. This process happens very quickly, allowing the transistor to switch on and off quickly.Advantages of IRG7PK42UD1PBF
The IRG7PK42UD1PBF offers many advantages to industrial and consumer applications due to its advanced technologies. These advantages include high-frequency operation and low power loss. The low power loss of this IGBT means it is more efficient and produces less heat. This makes it suitable for a wide range of applications such as welding, medical equipment, and transportation.The IRG7PK42UD1PBF also offers high-frequency operation, which makes it suitable for applications that require high frequency switching. It has been designed for high-frequency operation up to 20kHz and is reliable for long-term operation. The high-frequency operation makes it suitable for switching and controlling fast electrical loads.Conclusion
In conclusion, the IRG7PK42UD1PBF is an advanced IGBT that is suitable for many applications. Its power output up to 1.2kW and 500V application level make it suitable for consumer and industrial applications. Its low power loss and high-frequency operation make it suitable for applications such as welding, medical equipment, and transportation. It is reliable and efficient, making it a great choice for anyone looking for a reliable IGBT.The specific data is subject to PDF, and the above content is for reference
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