IRG7CH35UEF

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IRG7CH35UEF is a field-stop IGBT family of Vishay Semiconductor. These devices exhibit low conduction losses, as well as exceptionally fast switching capability, even at moderate temperatures. They are rated with a 600 V collector-emitter voltage, and a maximum blocking voltage of 800 V. The switching speed ranges from a slow frequency of less than 5 kHz to a medium frequency of 250 kHz.

Applications

IRG7CH35UEF IGBTs are ideally suited for a wide range of applications. These include motor drives and micro-inverters, high-power switching, lighting control systems, traction inverters, and many other power control applications. Due to their low conduction losses and exceptionally fast switching, they offer superior performance in various applications requiring low-power input, high-power output, and high-speed switch-safe operation.

Working Principle

The IRG7CH35UEF is a unipolar, field-stop IGBT. A field-stop IGBT differs from a standard MOS-controlled IGBT in that its gate is more heavily doped. This causes a more rugged, miniature, and reliable device to be fabricated. The device’s bipolar transistor component is the same as in a standard MOS-controlled IGBT.

IRG7CH35UEF works on the principle of a bipolar junction transistor having a gate-controlled p-n-p-n type of body structure. The IGBT consists of a p-type base and an n-type emitter connected back to back forming a collector. The gate terminal is normally in the off-state, keeping the collector-emitter circuit in the open-state. When the gate-emitter voltage is increased above the threshold voltage, electrons in the base region recombine with holes in the emitter resulting in an n-type current flow in the emitter-collector circuit. This condition is called inversion, and results in current flow through the device when turned on.

IRG7CH35UEF is highly reliable and robust due to its built-in protective features. It offers superior static dV/dt switching guarantees, and virtually eliminates the need for external snubber circuits. This reduces system cost and complexity while increasing system efficiency and reliability.

In conclusion, IRG7CH35UEF are a great choice for applications that require low conduction losses, fast switching speeds and superior reliability. They offer the highest levels of protection and performance for power control applications.

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