IRG7CH42UED Allicdata Electronics
Allicdata Part #:

IRG7CH42UED-ND

Manufacturer Part#:

IRG7CH42UED

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST DIE
More Detail: IGBT
DataSheet: IRG7CH42UED datasheetIRG7CH42UED Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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IRG7CH42UED Application Field and Working Principle

A IRG7CH42UED is a type of transistor known as an Insulated Gate Bipolar Transistor (IGBT). It is a special type of semiconductor device that combines the properties of both bipolar transistors and insulated gate field effect transistors (IGFETs), making it ideal for use in many applications. This article will discuss the application field of IRG7CH42UED and its working principle.

Application Field

The IRG7CH42UED is a perfect choice for many different industrial applications. It is highly reliable, with a temperature range of -55°C to 175°C, making it suitable for many harsh environments. It is also capable of operating at formidable speeds, up to 1MHz, allowing for fast switching times. With its low on-state voltage drop and current rating of 24A, it can be used as an ideal switch for both high voltage and high current applications. In addition, its high surge current capability and strong immunity to electrical noise make it an excellent choice for use in high power applications. Therefore, the IRG7CH42UED is widely used in motor control, such as in electric vehicles, welding machines, light dimmers, and more.

Working Principle

The IRG7CH42UED is based on a simple principle: when the gate voltage is increased, the gate-emitter voltage becomes negative with respect to the source, resulting in an increase in the Drain-Source current. This occurs because the gate-emitter junction has become reverse-biased, and current can flow from the Drain to the Source.

This mechanism is the same for both bipolar transistors and insulated gate transistors, but the difference is in how the gate voltage is applied. In a bipolar transistor, the gate voltage is dependent on the current flow between the collector and the emitter. In an insulated gate transistor, the gate voltage is applied externally, and the amount of current flowing between the drain and source is dependent on the magnitude of the gate voltage. This makes the IGBT the ideal choice for applications requiring fast and reliable switching.

The IRG7CH42UED also offers excellent thermal performance and a wide temperature range. This makes it easier to design circuits that can operate reliably in extreme temperatures, as it does not require a cooling fan. Furthermore, it features low switching and conduction losses, which helps to improve the efficiency of the system in which it is being used.

Conclusion

The IRG7CH42UED is an excellent choice for a variety of industrial applications. It features an incredible combination of features, such as fast switching, high immunity to electrical noise, and high surge current capability. Furthermore, its low on-state voltage drop and current rating of 24A make it ideal for use in high voltage and high current applications. The IRG7CH42UED is also highly reliable, with a temperature range of -55°C to 175°C, making it suitable for many harsh environments. As such, it can be used as an ideal switch for many different industrial applications.

The specific data is subject to PDF, and the above content is for reference

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