IRG7PH46UPBF Allicdata Electronics
Allicdata Part #:

IRG7PH46UPBF-ND

Manufacturer Part#:

IRG7PH46UPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 130A 469W TO247AC
More Detail: IGBT Trench 1200V 130A 469W Through Hole TO-247AC
DataSheet: IRG7PH46UPBF datasheetIRG7PH46UPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 600V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C: 45ns/410ns
Gate Charge: 220nC
Input Type: Standard
Series: --
Power - Max: 469W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Current - Collector Pulsed (Icm): 160A
Current - Collector (Ic) (Max): 130A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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The IRG7PH46UPBF transistor, part of the Z-series of IGBTs manufactured by International Rectifier, is a single pulse-type power semiconductor device capable of handling large currents under extreme operating conditions. It is designed to latch-up via an active gate voltage and its transistors are rated for 300A and 70V. The IRG7PH46UPBF replaces traditional bipolar transistors in power switching applications, providing higher efficiency and improved power savings than its counterparts. As part of the Z-series, IRG7PH46UPBF is available in modules and offers a wide range of features and options for system designers, including the ability to be connected in series for higher current-handling capabilities.

The IRG7PH46UPBF is a fast-recovery diode designed to switch large voltages and currents with the help of an active gate voltage. It uses IGBT technology, which employs insulated-gate bipolar transistors to control the current flow between two electrodes. This technology offers a wide range of benefits for power switching applications, including fast switching speed, high efficiency and reduced switching losses. Additionally, IGBTs are able to handle large voltage and current levels with lower power losses than bipolar transistors.

When acting as a switch, the IRG7PH46UPBF draws current from the positive supply and pulls it down the output voltage. When the control gate voltage exceeds the gate threshold voltage, the device is turned on, creating a low resistance path between the electrodes, allowing current to flow. When the control voltage is reduced below the gate threshold voltage, the device is turned off, creating an open circuit and shutting off the current flow. This makes the device perfect for applications that require high-speed switching and high-current handling capabilities.

The IRG7PH46UPBF can be used in a wide range of applications, including solar energy systems, power supplies and motor controls. Its high switching speed and high current-handling capabilities makes it an ideal choice for applications that require fast, efficient and reliable switching. Additionally, its low power consumption makes it suitable for battery-powered applications, as it decreases the overall power consumption of the system.

In conclusion, the IRG7PH46UPBF is a high-performance, fast-switching transistor designed for use in applications that require high current-handling capabilities and high speed switching. The active gate voltage allows the device to latch up, while its IGBT technology reduces switching losses and improves efficiency. Its low power consumption and wide range of applications make it a popular choice for designers of power systems.

The specific data is subject to PDF, and the above content is for reference

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