IRG7PH50U-EP Allicdata Electronics
Allicdata Part #:

IRG7PH50U-EP-ND

Manufacturer Part#:

IRG7PH50U-EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V ULTRA FAST TO247
More Detail: IGBT Trench 1200V 140A 556W Through Hole PG-TO247A...
DataSheet: IRG7PH50U-EP datasheetIRG7PH50U-EP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 4.6mJ (on), 3.2mJ (off)
Supplier Device Package: PG-TO247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 600V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C: 35ns/430ns
Gate Charge: 440nC
Input Type: Standard
Series: --
Power - Max: 556W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 140A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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An IRG7PH50U-EP is a type of transistor – a type of switch – belonging to the family of Insulated Gate Bipolar Transistors (IGBTs). It is a single device, meaning that it consists of a single unit, rather than multiple interconnected units.

The IRG7PH50U-EP is a type of power transistor that can be used for a variety of applications. It has a high current-carrying capacity and voltage-bearing capacity, making it suitable for power applications such as electronic motor drives, power modules, inverters and industrial power supplies.

The IRG7PH50U-EP also has strong reliability, including a low noise level, high breakdown voltage, low on-state resistance and fast switching speed. This makes it suitable for use in a wide range of applications, including home appliance control, motor control and battery management.

The IRG7PH50U-EP works on the principle of the PN junction. It works by isolating a P-type semiconductor from an N-type semiconductor. When an electric current is applied across the junction, one type of charge is allowed to flow through the P-type layer, while the other is blocked. This creates a flow of electrons from the P-type layer to the N-type layer, allowing the device to switch between it two conducting and non-conducting states.

The IRG7PH50U-EP is ideal for applications that require a reliable and powerful power switch. It is easy to install and use, and its high current-carrying capacity and voltage-bearing capacity make it suitable for a wide range of applications. It is also a cost-effective solution, as it is typically much cheaper than other similarly powerful devices.

The specific data is subject to PDF, and the above content is for reference

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