IXFL100N50P

Vgs(th) (Max) @ Id:	5V @ 8mA
Package / Case:	ISOPLUS264™
Supplier Device Package:	ISOPLUS264™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	625W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	20000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	52 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFL100N50P application field and working principle

The IXFL100N50P is a 100V N-Channel MOSFET manufactured by IXYS Corporation. This part is designed to be used in a wide range of applications, such as switching, amplifiers, and power management circuits. It can be used in power supplies, DC-DC converters, lighting, LED drivers, motor control and various other applications.A MOSFET (metal oxide semiconductor field-effect transistor) is an electronic device commonly used as a switch or amplifier. These devices work by controlling the electrical current flow between two terminals by varying the voltage applied to a gate. The IXFL100N50P is a N-Channel enhancement mode device. This means that the channel on the device is initially turned off no matter how much voltage is applied to the gate. In order to turn the device on, a voltage must be applied to the gate that is higher than the threshold voltage.The maximum drain-source voltage rating of the IXFL100N50P is 100V. This means that the voltage applied between the drain and the source can be up to 100V. The maximum drain current for this device is 50A, meaning that the maximum current flowing from the drain to the source can be up to 50A. The IXFL100N50P has a low on-state resistance of 6.2mΩ. This means that when the device is on, the resistance between the source and the drain is 6.2mΩ. This low on-state resistance helps to reduce power consumption.The IXFL100N50P has a maximum power dissipation of 91.5W. This is the maximum amount of power that can be dissipated in the form of heat by the device. The configuration of the IXFL100N50P is a 3-pin package. The package has a drain, gate and source terminal. The drain terminal must be connected to the source terminal for the device to turn on. The gate terminal is used to control the device, and the source terminal carries the output signal from the device.The working principle of the IXFL100N50P is based on the MOSFET mechanism. This mechanism is based on the generation of a channel between the drain and the source depending on the voltage applied to the gate. When a voltage is applied to the gate that is higher than the threshold voltage, a channel is generated which allows the current to flow from the drain to the source.The IXFL100N50P can be used in a variety of applications such as switching, amplifiers, and power management circuits. It can be used in power supplies, DC-DC converters, lighting, LED drivers, motor control and various other applications.In conclusion, the IXFL100N50P is a 100V N-Channel MOSFET designed and manufactured by IXYS Corporation. It has a low on-state resistance of 6.2mΩ, a maximum drain current of 50A, and a maximum power dissipation of 91.5W. It is typically used in a variety of applications, such as switching, amplifiers, and power management circuits.

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