IXFL44N80 Allicdata Electronics
Allicdata Part #:

IXFL44N80-ND

Manufacturer Part#:

IXFL44N80

Price: $ 26.29
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 44A ISOPLUS264
More Detail: N-Channel 800V 44A (Tc) 550W (Tc) Through Hole ISO...
DataSheet: IXFL44N80 datasheetIXFL44N80 Datasheet/PDF
Quantity: 1000
25 +: $ 23.90270
Stock 1000Can Ship Immediately
$ 26.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 8mA
Package / Case: ISOPLUS264™
Supplier Device Package: ISOPLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 550W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 165 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFL44N80 device is a power field effect transistor (FET) device manufactured by the IXYS Corporation. It is designed to operate in harsh environments, increasing its quality and reliability. The IXFL44N80 uses a N-channel enhancement mode of operation with Die-Locked Technology, making it an indispensable component in a wide range of electronic devices.

The device’s main application fields are motor control, welding control, robotics, and power converters. The IXFL44N80 also enhances power boards for LED drivers, automotive inverters, home appliances and other similar applications. It can even be used in solar energy and uninterruptible power supply (UPS) applications.

The IXFL44N80 comprises of a Drain source drain source and Gate gate structure. Its two main terminals, the drain and source, form a channel between them, and constitute a region in which the current will flow. This channel also moderates the flow of current through the device, thus regulating its main function, which is to switch ON/OFF the power source. In other words, it acts as an ON/OFF switch.

The Gate terminal is connected to the external control voltage, which determines the maximum current the device can handle. Thus, to control the current amplitude, this voltage must be varied. The channel section within the device is responsible for the modulation of the currents, which is done through the body effect. It is this effect that is responsible for the ability of the IXFL44N80 to withstand extreme environment conditions, like heat, cold and radiation.

The Die-Locked Technology developed by IXYS Corporation makes the IXFL44N80 device so reliable and strong. The device’s die is permanently locked into the lead frame and treated to passivation with HerPerm L10, an advanced chemical vapor deposition material. This process ensures greater stability and reliability of the electrical components, which results in less power losses and fewer power cycle failures.

In conclusion, the IXFL44N80 device is a reliable and cost-effective component for a wide range of applications, from motor control to welding control and robotics. Its power field effect transistor features, combined with its efficient die-locking system and superior protection, make it a dependable component that can withstand harsh environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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