IXFL32N120P Allicdata Electronics
Allicdata Part #:

IXFL32N120P-ND

Manufacturer Part#:

IXFL32N120P

Price: $ 28.57
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 24A I5-PAK
More Detail: N-Channel 1200V 24A (Tc) 520W (Tc) Through Hole IS...
DataSheet: IXFL32N120P datasheetIXFL32N120P Datasheet/PDF
Quantity: 1000
25 +: $ 25.96610
Stock 1000Can Ship Immediately
$ 28.57
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: ISOPLUSi5-Pak™
Supplier Device Package: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 340 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFL32N120P is a power field-effect transistor (FET) that can be used to control electrical power circuits in a variety of applications, from industrial control to automotive systems.

A FET is basically an electronic switch that is used in a wide variety of electronic applications. It consists of three terminals: the gate, the drain and the source. The gate is used to control the flow of electricity between the source and the drain. The IXFL32N120P is a single FET which means that it has just one gate and one drain rather than two. This makes it suitable for applications where a single switch is required.

When the voltage applied to the gate is high enough, the FET is turned on, allowing current to flow through the source and drain. The current flow is controlled by the voltage applied to the gate. The higher the voltage, the higher the current flow. As the voltage applied to the gate is decreased, the current flow decreases. This makes the FET an ideal device for controlling power circuits, as the amount of power being passed can be precisely controlled.

The IXFL32N120P has a maximum drain-source voltage of 900 volts and a drain-source current rating of 32 amperes. This makes it ideal for high-power applications, including automotive, industrial, and commercial systems. The device also features high-speed switching and low on-resistance, which makes it well-suited for power management applications where fast switching and low power losses are important.

The device also features a plastic SMD package, which makes it easy to integrate into many applications. The package has a flange for easy mounting and is designed to meet the stringent requirements of industrial and automotive systems. The package also ensures that the FET is protected from mechanical and environmental damage.

Due to its high power rating and low on-resistance, the IXFL32N120P is suitable for a range of applications, including motor control, DC/DC converters, LED lighting control, and DC-DC power supplies. The device is also well-suited for many other high-power and high-frequency applications, such as switching circuits, radio frequency amplifiers, and power amplifiers.

The IXFL32N120P is an extremely reliable and versatile power FET that is suitable for a wide range of applications. It is capable of delivering high power and can be used to precisely control power circuits. The device has an easy-to-mount plastic SMD package and is designed to meet the requirements of industrial and automotive systems. It is an ideal choice for applications where fast switching and low power losses are important.

The specific data is subject to PDF, and the above content is for reference

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