| Allicdata Part #: | IXFL210N30P3-ND |
| Manufacturer Part#: |
IXFL210N30P3 |
| Price: | $ 19.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 300V 108A TO-264 |
| More Detail: | N-Channel 300V 108A (Tc) 520W (Tc) Through Hole IS... |
| DataSheet: |  IXFL210N30P3 Datasheet/PDF |
| Quantity: | 60 |
| 1 +: | $ 17.50140 |
| 25 +: | $ 14.87840 |
| 100 +: | $ 13.82810 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 8mA |
| Package / Case: | ISOPLUS264™ |
| Supplier Device Package: | ISOPLUS264™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 16200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 268nC @ 10V |
| Series: | HiPerFET™, Polar3™ |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 105A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 108A (Tc) |
| Drain to Source Voltage (Vdss): | 300V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IXFL210N30P3 is a type of transistor, classified as a FET (Field Effect Transistor). FETs are components that rely on transistors to control electrical current flows; they are also known as insulated gate transistors. IXFL210N30P3 is an SOT (Single Output Transistor), meaning it has one source and one drain.
The application field of IXFL210N30P3 covers a wide range of areas, such as audio systems, automotive electronics, home appliances, medical equipment, communication and industrial electronics. IXFL210N30P3 provides superior dynamic characteristics, making it suitable for applications in high speed switching circuits.
The working principle of IXFL210N30P3 is basically the same as that of other Field Effect Transistors (FETs). When connected to an appropriate voltage supply, the gate of the FET works in a similar way as a switch, enabling current to flow from the source terminal to the drain terminal. When the gate voltage is lowered below the threshold voltage, the FET is switched off and no current flows through the component.
IXFL210N30P3 is equipped with a number of features which make it ideal for use in a wide range of applications. The semiconductor material used in this component has low ON-resistance, a low switching noise, a high breakdown voltage and a low input capacitance. Moreover, the component has a low energy loss, which helps it to achieve a high power output.
In conclusion, IXFL210N30P3 is a single output transistor which is suitable for use in many different applications. Its low ON-resistance, low switching noise and low input capacitance make it an ideal component for high speed switching circuits. The component also features a low energy loss, helping it to achieve a high power output.
The specific data is subject to PDF, and the above content is for reference
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