IXFL44N60 Allicdata Electronics
Allicdata Part #:

IXFL44N60-ND

Manufacturer Part#:

IXFL44N60

Price: $ 18.49
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 41A ISOPLUS264
More Detail: N-Channel 600V 41A (Tc) 500W (Tc) Through Hole ISO...
DataSheet: IXFL44N60 datasheetIXFL44N60 Datasheet/PDF
Quantity: 1000
25 +: $ 16.81190
Stock 1000Can Ship Immediately
$ 18.49
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: ISOPLUS264™
Supplier Device Package: ISOPLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFL44N60 is a high-performance, high frequency N-Channel Field Effect Transistor (FET). It operates in a voltage range of 20V and is designed to be used as a switching device in various applications. This FET is usually used in audio, display, home appliances and telecom system applications.

The IXFL44N60 is a single-channel FET, which is commonly called a Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET). This particular type of FET is one of the most popular types and is used for its wide range of applications. It has high switching speeds, which makes it ideal for high frequency operations.

The working principle of the IXFL44N60 involves the movement of electrons between the source and drain contacts of the device. The source is the negative pole and the drain is the positive pole. When a potential is applied between the source and the drain, it creates an electrostatic field which causes the electrons to flow, creating current. This current causes the channel of the device to open and close.

When a greater voltage is applied, it causes the electrons in the channel to move faster and form a conducting channel. This channel is known as the inversion layer, which is responsible for controlling the performance of the device. The larger the inversion layer, the higher the performance and the higher the switching speed of the device.

The IXFL44N60 is also known for its low power consumption and its ability to handle high frequencies. It also has excellent immunity to electrostatic discharge and has an endurance of up to 10,000 cycles. Therefore, it is ideal for use in applications where high frequencies and low power consumption are important factors.

The IXFL44N60 is known for its high efficiency rating and very low gate charge. It also has an integrated gate-to-source protection diode, which provides additional protection against transient currents. Furthermore, the device has a wide range of operating temperatures, allowing it to be used in many different environments.

The IXFL44N60 is an important component for many different applications. It is popular for audio applications, as it offers excellent distortion characteristics and low power consumption. Additionally, it is used for power switching applications, as it has a low loss and can handle high frequencies and high voltage operations. It is also used in display applications and home appliances and telecom systems for switching purposes.

In conclusion, the IXFL44N60 is an excellent device for many high frequency applications. It is ideal for applications that require high speeds, low power consumption and excellent distortion characteristics. It has a wide range of operating temperatures and is highly resistant to electrostatic discharge. As such, it is a reliable and preferred component for many different applications.

The specific data is subject to PDF, and the above content is for reference

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