IXFL55N50 Allicdata Electronics
Allicdata Part #:

IXFL55N50-ND

Manufacturer Part#:

IXFL55N50

Price: $ 15.93
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 55A TO-264AA
More Detail: N-Channel 500V 55A (Tc) Through Hole ISOPLUS264™
DataSheet: IXFL55N50 datasheetIXFL55N50 Datasheet/PDF
Quantity: 1000
25 +: $ 14.48420
Stock 1000Can Ship Immediately
$ 15.93
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264™
Package / Case: ISOPLUS264™
Description

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Introduction

IXFL55N50 is a high voltage fast recuperative diode-stabilized super-junction Field Effect Transistor (FET) with an extremely reduced gate charge. This device combines performance characteristics and improved results with low gate charge requirements. This transistor is a high voltage, high speed, recuperative diode-stabilized device with a full N-channel enhancement mode structure.

Features & Benefits

  • Low turn-on switching time
  • Low gate charge and output capacitance
  • High speed switching
  • Low on-resistance
  • Improved thermal performance
  • Low input capacitance

Application Field and Working Principle

Application Field

The IXFL55N50 is suitable for high frequency switching applications with the low gate charge characteristic. It could be used in thermostats, high side switch in DCDC converters, power MOSFETs, AC-DC converters, and other power switching applications.

Working Principle

IXFL55N50 is a metal–oxide–semiconductor FET (MOSFET) and works based on two gate electrodes that controls the switching mechanism, one is a metal gate and the other is a semiconductor gate. When the metal gate is switched on and off, electrons redistribute in the regions that form the channel between the channel source and the channel drain. The channel is formed by a thin layer of silicon dioxide between the gate and the bottom of the transistor.When the metal gate is off, there will be no channel and no current gets through. When the metal gate is switched on, a channel provides charge carriers with a path to move from source to drain. Thus, current can flow through the transistor. The resistance between source and drain will depend on the voltage applied to the metal gate which controls the resistance of the channel.

Conclusion

IXFL55N50 is an N-channel FET that is suitable for high frequency switching applications due to its low gate charge characteristics. It is a high voltage, high speed, recuperative diode-stabilized device with a full N-channel enhancement mode structure. This device combines performance characteristics and improved results with low gate charge requirements. It is suitable for applications such as thermostats, high side switch in DCDC converters, power MOSFETs, ac-dc converters, and other power switching applications.

The specific data is subject to PDF, and the above content is for reference

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