IXFL70N60Q2 Allicdata Electronics
Allicdata Part #:

IXFL70N60Q2-ND

Manufacturer Part#:

IXFL70N60Q2

Price: $ 24.07
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 37A ISOPLUS264
More Detail: N-Channel 600V 37A (Tc) 360W (Tc) Through Hole ISO...
DataSheet: IXFL70N60Q2 datasheetIXFL70N60Q2 Datasheet/PDF
Quantity: 1000
25 +: $ 21.88650
Stock 1000Can Ship Immediately
$ 24.07
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: ISOPLUS264™
Supplier Device Package: ISOPLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 92 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Transistors, an essential component of any electric engineering projects, are paramount in controlling electric current. Field-effect transistors, the most common type of transistors, include the FETs and MOSFETs. In particular, IXFL70N60Q2, which is a single MOSFET, is often used in many applications.

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor is made up mainly of semiconductor materials like silicon, as well as thin layers of metal and other conducting materials between them. The current flows between drain and source (D-S) through the metal which forms the channel, suspended between the gate and the source. The metal oxide layer is used to create an insulating barrier between the gate and the substrate, allowing only the electric fields to influence the movement of the electrons.

When there is a positive potential applied at the gate, the temperature on the surface of the substrate increases, creating a drain-source flow of electrons. The electrons then drift across the gate, causing a current to flow through the FET. This current is referred to as the drain-source current. The drain-source current can be controlled by changing the potential applied at the gate.

IXFL70N60Q2 is a single-channel transistor specifically created for high-power applications due to its low on-resistance and wide drain-source voltage range. It is designed with a monolithic structure, which is known for its superior reliability and fast switching characteristics when compared to other single-channel transistors.

One of the primary applications of IXFL70N60Q2 is for motor control. Its low on-resistance, together with its wide voltage range, makes it ideal for controlling large electric motors. This FET is also suitable for use in high-frequency amplifiers and other high-power applications.

This FET can also be used in battery-powered applications, such as portable digital devices and computers, due to its low power consumption. By using IXFL70N60Q2 in such applications, the devices can remain powered for longer than with other transistors.

Not only is IXFL70N60Q2 used in a variety of applications, but it also offers excellent performance, reliability, and high power efficiency. Moreover, its monolithic structure ensures stability and scalability across multiple applications, making it an ideal choice for engineers looking for a reliable and efficient solution.

The specific data is subject to PDF, and the above content is for reference

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