IXFL38N100Q2

Vgs(th) (Max) @ Id:	5.5V @ 8mA
Package / Case:	ISOPLUS264™
Supplier Device Package:	ISOPLUS264™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	380W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	13500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	250nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	280 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFL38N100Q2 is an insulated gate field effect transistor (IGFET). The device is an insulated gate bipolar transistor (IGBT) with a 120 V breakdown voltage, 2 mOhm on-resistance and an average gate charge of 5 nC. Its drain-source voltage rating and the gate-source voltage ratings are the same. The IXFL38N100Q2 is available in a 6-pin dual-in-line package (DIP), 4-pin surface mount package and 3-pin single package package. The device is also available in a thermally enhanced version for increased power levels. This device is used in high-power applications including motor control, welding, lighting, and power switching applications. It is also suitable for automotive, industrial and consumer applications.The working principle of IXFL38N100Q2 is based on the properties of the Gate, which controls the amount of current allowed to flow through the device. When the Gate voltage is below the threshold voltage of the device, no current flows through the device. When the Gate voltage is increased, the device is turned ON, and current flows through the device. As the Gate voltage is increased further, the current is increased linearly until the device is fully saturated. The drain-source voltage (Vds) is limited by the ability of the IGFET to withstand high temperatures. In order to prevent overheating, the maximum drain-source voltage (Vds max) is determined. High temperatures can also cause the IGFET to become unstable and experience increases in on-resistance. The Gate-source voltage (Vgs) is used to control the amount of current flowing through the device. A positive voltage on the Gate enables the device and a negative voltage on the Gate disables the device. The state of the device (ON or OFF) is determined by the current through the device.The maximum Gate-source voltage (Vgs max) is limited by the breakdown voltage of the Gate oxide. If the Gate voltage exceeds the breakdown voltage, the Gate oxide will be damaged and the device will not function properly. IXFL38N100Q2 is designed specifically for high power applications requiring a low gate charge and low on-resistance. The low gate charge makes the device easier to drive. The low on-resistance means that the device can carry more current without significant voltage drop across the device. In summary, IXFL38N100Q2 is an insulated gate field effect transistor (IGFET) used in high power applications such as motor control and power switching. The device is available in 6-pin, 4-pin and 3-pin packages. Its working principle is based on the properties of the gate, which controls the amount of current allowed to flow through the device. The gate voltage serves as the switch which enables or disables the device. The device is designed for high power applications due to its low gate charge and low on-resistance.

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