IXFL82N60P

Vgs(th) (Max) @ Id:	5V @ 8mA
Package / Case:	ISOPLUS264™
Supplier Device Package:	ISOPLUS264™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	625W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	23000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	78 mOhm @ 41A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>IXFL82N60P is an advanced insulated-gate field effect transistor (IGFET) which belongs to the family of field-effect transistors (FET). It is a MOSFET with a single gate, hence the name "single" MOSFET. The device is based on the concept of transferring charge carriers, such as electrons, from one metal-oxide semiconductor (MOS), an insulated gate, to another metal-oxide semiconductor (MOS) gate, forming an insulated-gate field-effect transistor.</p><p>The IXFL82N60P is a power field-effect transistor made with N-channel MOS technology. This device offers excellent switching characteristics, low gate charge and fast charge risetime, making it ideal for applications such as switched-mode power supplies, motor drive and pulse width modulation. It is also used in battery-operated and portable products, and can also be used as a switch in telecommunications applications.</p><p>The working principle of the IXFL82N60P is based on the concept of voltage-controlled current. This is achieved when the current flowing through the channel between the source and drain terminals is controlled by the voltage applied to the gate terminal. In operation, the application of a suitable voltage to the gate terminal changes the resistance between the source and drain terminals, thereby controlling the amount of current flowing through the channel.</p><p>The IXFL82N60P is well suited for high power applications such as power supplies and motor drives, due to its high voltage and current ratings. It is also capable of switching high frequencies and can be used in circuit designs to provide low-noise operation as it exhibits low EMI and fast switching times.</p><p>The IXFL82N60P is a versatile device, and can be used in a variety of applications. It is commonly used in power supplies, motor drives, telecommunications, battery-operated products and pulse width modulation. Additionally, it can be used as a switch in industrial, automotive and defense systems, due to its fast switching times and low EMI.</p><p>In conclusion, the IXFL82N60P is a well-designed insulated gate field effect transistor suitable for use in high power, high-frequency switching applications. It is widely used in a number of applications due to its excellent switching characteristics, low gate charge, fast charge risetime, low EMI and high voltage and current ratings.</p>

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