IXFL34N100

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The IXFL34N100 is a single-gate FET (Field Effect Transistor) that offers outstanding performance in HF/VHF circuits where high speed and low-on resistance are key features. It features excellent low-on resistance and high breakdown voltage, along with low input capacitance. With its higher frequencies, better linearity and low Gate-to-Source capacitance, it offers superior performance compared to other FETs. The IXFL34N100 is suitable for a wide range of applications, including high speed switching, high-frequency amplifiers, and low-noise amplifiers.

FETs are three-terminal active devices with gate, drain and source electrodes. Their voltage-controlled behavior allows them to be used as electrical switches, in amplifiers and in various types of analog circuits.

In a FET, the gate electrode acts as the control element, while the source and drain electrodes act as current carriers. When voltage is applied to the gate (VGS), the channel between the source and drain becomes conductive, allowing current to flow from the source to the drain. The current flow is controlled by adjusting the gate-to-source voltage. This is known as enhancement-mode operation.

When the gate-to-source voltage, or VGS is reduced below a certain threshold, the channel between source and drain breaks and current cannot flow. This is known as the Depletion-Mode operation. FETs are capable of both Enhancement-Mode and Depletion-Mode operations.

The IXFL34N100 is a single-gate FET, meaning that it has a single gate electrode and two current-carrying electrodes. It also has a high transconductance, which is the amount of current that can flow between the source and drain electrodes when a specific gate-to-source voltage is applied. The IXFL34N100 has a VGS(TH) of -3V and a high transconductance of 18 mS, which means that it can handle high currents and provide excellent switching performance.

The IXFL34N100 also has a low-on resistance (RDSon) of 8 ohms and a high breakdown voltage of 60V, making it suitable for use in many types of high voltage circuits. It has a low input capacitance as well, which helps reduce noise and improves the linearity of the FET. In addition, the IXFL34N100 has a higher frequency range than most FETs, making it suitable for high-frequency applications such as amplifiers for radio frequency (RF) signals.

The IXFL34N100 is versatile and can be used in a wide variety of applications, including high speed switching, high-frequency amplifiers, and low-noise amplifiers. Its superior performance in high-frequency circuits, combined with its low-on resistance and high breakdown voltage, make it an ideal choice for these types of applications.

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