IXFL60N60 Allicdata Electronics
Allicdata Part #:

IXFL60N60-ND

Manufacturer Part#:

IXFL60N60

Price: $ 19.31
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 60A ISOPLUS264
More Detail: N-Channel 600V 60A (Tc) 700W (Tc) Through Hole ISO...
DataSheet: IXFL60N60 datasheetIXFL60N60 Datasheet/PDF
Quantity: 1000
25 +: $ 17.55100
Stock 1000Can Ship Immediately
$ 19.31
Specifications
Vgs(th) (Max) @ Id: 4V @ 8mA
Package / Case: ISOPLUS264™
Supplier Device Package: ISOPLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 80 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFL60N60 is an insulated-gate FET (IGFET) belonging to a range of field-effect transistors released by IXYS Corporation for high power applications in industries such as automotive, medical and aerospace. In this guide, we’ll be exploring the IXFL60N60’s main application fields and its fundamental working principle.

IXFL60N60 Application Fields

The IXFL60N60 is a fast-switching 600V high-voltage MOSFET with advanced features. It is especially suited for use in PFC circuits, such as high-end server, telecom and networking systems, thanks to its wide load current range. The IXFL60N60 also possesses excellent switching characteristics, with low on-resistance and fast switching times making it suitable for motor control and resonant applications. Furthermore, it can be used in UPS and converters, giving it a wide range of potential applications.

Working Principle

The IXFL60N60 is a silicon gate-controlled insulated gate field-effect transistor that operates on a unique principle. At the heart of the transistor is a gate electrode between the device\'s drain and source, which forms the main conducting channel. This channel is typically made of either n-type or p-type material, and is used to control the current flow. When a voltage is applied to the gate electrode, electrons are attracted to or repelled from the channel and this opens or closes the conducting path.

The gate electrode is connected to the device\'s gate current source, which generates a small gate current when a gate signal is applied. This current modulates the resistance between source and drain, resulting in a varying channel conductivity. This allows the channel to be controlled and the module current to be adjusted. In other words, the IXFL60N60 acts as a voltage-controlled switch.

Conclusion

The IXFL60N60 is a fast-switching, high-voltage MOSFET that can be used in a wide range of applications. It is suited for use in PFC circuits, motor control and resonant applications, and offers excellent switching characteristics, low on-resistance and fast switching times. Operating on a unique principle, the IXFL60N60 uses a gate electrode and gate current source to modulate the channel conductivity and act as a voltage-controlled switch.

The specific data is subject to PDF, and the above content is for reference

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