IXFL60N80P Allicdata Electronics
Allicdata Part #:

IXFL60N80P-ND

Manufacturer Part#:

IXFL60N80P

Price: $ 14.20
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 40A ISOPLUS264
More Detail: N-Channel 800V 40A (Tc) 625W (Tc) Through Hole ISO...
DataSheet: IXFL60N80P datasheetIXFL60N80P Datasheet/PDF
Quantity: 1000
25 +: $ 12.90770
Stock 1000Can Ship Immediately
$ 14.2
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: ISOPLUS264™
Supplier Device Package: ISOPLUS264™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 150 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFL60N80P is a type of MOSFET belonging to the single-group. It is mainly used for motor control driver applications, such as robot control and digital signal processing. Due to its high current capabilities, it is an ideal choice for efficient power switching in a variety of industrial and consumer electronics.

At the heart of the IXFL60N80P MOSFET is a high-power silicon-on-insulator (SOI) n-channel FET. This is combined with other components to create a cost-effective, high-reliability design with low on-resistance, extremely low gate charge, and exceptional high switching frequency performance.

The MOSFET’s geometry is optimized for low capacitance and low drain-source on-resistance. This ensures that even high-current pulses can be handled without power loss. Its low on-state voltage allows for smooth and efficient control of the motor motion.

The IXFL60N80P MOSFETs are rated for a drain-source voltage of up to 600 V, making them suitable for a wide range of applications. Additionally, they can operate at frequencies of up to 100 MHz, allowing for further control capabilities and increased efficiency. The MOSFETs also feature a low threshold voltage, meaning they are well-suited for driving low to moderate voltage loads.

The IXFL60N80P MOSFETs operate on a unique principle known as the “MOSFET principle.” This refers to the use of a gate voltage to control the number of electrons which are allowed to flow through the drain-source channel. This allows for precise control of the drain current, meaning that the power switching can occur at any given time. The low gate charge and low gate resistance also ensure that high-frequency operation is possible with minimal power consumption.

It is important to note that the IXFL60N80P MOSFETs are not suitable for use in systems operating at low frequencies. They are usually reserved for high-frequency systems, as this allows for greater control and more efficient power switching. In these higher-frequency applications, they can also result in improved power conversion efficiency.

In conclusion, the IXFL60N80P is a type of MOSFET which is perfect for applications requiring efficient power switching such as motor control or digital signal processing. Its low on-resistance, low gate charge, and low gate resistance make it ideal for high-frequency operation. Finally, its low threshold voltage makes it suitable for smooth and efficient control of even low to moderate voltage loads, making it a great choice for a variety of industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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