Allicdata Part #: | IXFN170N10-ND |
Manufacturer Part#: |
IXFN170N10 |
Price: | $ 24.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 170A SOT-227B |
More Detail: | N-Channel 100V 170A (Tc) 600W (Tc) Chassis Mount S... |
DataSheet: | IXFN170N10 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 22.01600 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 515nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFN170N10 is a cool-Power technology type low on-resistance MOSFET from Fairchild Semiconductor. It is an N-channel enhancement mode MOSFET rated up to 170A at 25V. The IXFN170N10 is available in TO-218 package. This device also features a maximum low on-resistance of 22mohm per side and a low maximum on-resistance flatness of 0.4mohm. It is designed for high current switching applications such as motor control, DC/DC converter control and load switching.
The main function of the IXFN170N10 is to act as an electronic switch which can be used to control the current flow through a circuit. This is primarily done through the use of its large switching capabilities, allowing it to switch large currents with a relatively small input signal. The IXFN170N10 is also advantageous due to its low trigger voltage, which requires a low gate voltage to turn the device on.
The IXFN170N10 works by allowing current to flow through its drain and source pins when the gate voltage is applied. This gate voltage is controlled by an external voltage source connected to the gate terminal. When the gate voltage is positive, it turns on the device and allows current to flow through it. When the voltage is negative, it turns off the device and prevents current from flowing through it. The device’s maximum current rating and on-resistance will vary depending on the gate voltage applied and the amount of current flowing through the device.
The IXFN170N10 is most commonly used in switching applications, and is often used in motor control, DC/DC converters and load switching. It can also be used for lighting controls, battery switching, power control, and current and voltage regulation. It can also be used in applications that involve high currents, such as in communications systems and industrial automation. The IXFN170N10 is also used in applications that require a low voltage and low on-resistance, such as in laptops and cell phones.
In conclusion, the IXFN170N10 is an efficient and reliable low on-resistance MOSFET from Fairchild Semiconductor. Its extensive capabilities makes it suitable for high current switching applications such as motor control, DC/DC converter control and load switching. Its low trigger voltage and high current rating also make it suitable for applications that require a low voltage and low on-resistance, such as in laptops and cell phones. It is a highly effective device for controlling current flows in various circuits and can provide accurate and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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