
Allicdata Part #: | IXFN44N50U3-ND |
Manufacturer Part#: |
IXFN44N50U3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 44A SOT-227B |
More Detail: | N-Channel 500V 44A (Tc) 520W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFN44N50U3 is a new type of electrical device capable of creating high voltage power. It is a common-source, fast-switching field effect transistor (FET), specifically a MOSFET that has been specially shaped for use in switch mode power supplies. In particular, the IXFN44N50U3 is made up of an array of four diodes and a single N-type relay. It has robust and reliable mechanical performance, capable of supporting high-power switches, and is favored by many applications.
The IXFN44N50U3 is used in applications to produce high voltage output power, such as in various medical, aerospace and defense-related applications. These applications typically rely on the IXFN44N50U3 to energize and control an array of other high-power switches or devices that carry out a different function or part of a system. In this way, the IXFN44N50U3 acts as a central switch that controls power to the rest of the system, and can be used to help regulate current and voltage.
The working principle of the IXFN44N50U3 is based on the Gates-Drain action principle. This is the same as any other MOSFET, in that it has two terminals, the gate and the drain. The gate is charged with an electric potential, and when this becomes more positive than the potential of the drain, a voltage pass channel is created. Current can then flow through the IXFN44N50U3, allowing it to control the flow of power in the system. In this way, the IXFN44N50U3 can be used to turn devices on or off and regulate the power transfer in a system.
The IXFN44N50U3 can also be used to assist in making calculations and measuring variables. It is capable of performing logic operations to calculate or modify parameters, such as, controlling the on/off duty cycle, voltage, current and power levels, which can then be used in various applications. For example, the IXFN44N50U3 can be used to monitor and control the voltage, current and power of a solar cell array, or the speed a motor is running at.
In conclusion, the IXFN44N50U3 is a new FET that is capable of creating high voltage power. It uses the Gates-Drain action principle to conduct current, and it is used in various medical, aerospace and defense-related applications. The IXFN44N50U3 can also be used to assist in making calculations, and it is capable of performing logic operations to modify parameters, such as voltage, current and power. In this way, the IXFN44N50U3 can be used to control power, as well as monitor and control the voltage, current and power of various other systems.
The specific data is subject to PDF, and the above content is for reference
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