IXFN180N07

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The IXFN180N07 is a single N-channel enhancement-mode field-effect transistor (FET). This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for use in high-current and high-temperature applications. IXFN180N07 is well suited for DC-DC converters, audio amplifiers and other applications where low on-state resistance and fast switching are required.

The IXFN180N07 is built on a hexagonal substrate with an N-channel enhancement MOSFET. Its construction is such that its N-channel region is fabricated from a heavily doped N-type silicon layer sandwiched between two layers of highly insulating oxide. This arrangement reduces the device’s resistance and strengthens its electrical output, allowing for improved performance at high temperature. The drain-source junction has a breakdown voltage rating of 300V, and its total gate charge is only 4.5nC.

The IXFN180N07 also features a maximum channel temperature of 175°C, as well as an adjustable gate threshold voltage (2.2 to 4.0V). The device is available in PQFN packages, which are mechanically strong, resistant to environmental factors and offer minimal effective parasitic inductance and capacitance. These inherent characteristics, coupled with the transistor’s high temperature and current handling capabilities, make the IXFN180N07 ideal for use in a wide range of high-current, high-temperature applications.

To operate the IXFN180N07, a gate voltage must be applied. This gate voltage can be as low as 2.2V and as high as 6.5V. Controlled by this gate voltage, the IXFN180N07 allows electrons to flow from the source to the drain, acting as an electronic switch. The higher the gate voltage applied, the more the resistance of the N-channel depletion region is decreased, thus allowing greater electron flow. As the drain-source voltage across the IXFN180N07 increases, the current flow is limited by the device\'s on-state resistance. The device turns off when the drain-source voltage is decreased to below the threshold voltage.

In summary, the IXFN180N07 is a high-performance single N-channel enhancement-mode FET ideal for use in high-current and high-temperature applications. Its adjustable gate threshold voltage, low on-state resistance and high temperature operation make it suitable for a wide range of applications. The device is available in a PQFN package, which is mechanically strong and offers minimal effective parasitic inductance and capacitance.

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