IXFN32N80P Allicdata Electronics
Allicdata Part #:

IXFN32N80P-ND

Manufacturer Part#:

IXFN32N80P

Price: $ 13.45
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 29A SOT-227B
More Detail: N-Channel 800V 29A (Tc) 625W (Tc) Chassis Mount SO...
DataSheet: IXFN32N80P datasheetIXFN32N80P Datasheet/PDF
Quantity: 1000
10 +: $ 12.23460
Stock 1000Can Ship Immediately
$ 13.45
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFN32N80P is a family of high-speed, low-voltage, enhanced-Current Mode Logic (ECML) MOSFETs, which are easily compatible with the current industry standard logic families. These logic-compatible devices provide up to 2.5 times better On-state performance, while maintaining the low-capacitance drain-to-source linear characteristics needed for fast-switching operations. An important advantage of these devices is that they are suitable for various applications such as analog, digital, and power drivers. With their enhanced On-state performance, they can handle higher drain current, lower switching speed, and better short-circuit handling capabilities.

The IXFN32N80P is a versatile MOSFET, which can be used in multiple applications. It is suitable for a wide range of applications that require high speed and current handling, including general-purpose switching, multi-phase DC-DC converters, power supplies, motor drivers, and audio power amplifiers. It is also ideal for use in ultra-low voltage systems, such as tablets, smartphones, and portable devices, where low power and low noise are necessary for reliable operation.

The IXFN32N80P utilizes a bucket-type structure, which gives it a high switching speed and better short-circuit handling capacities. These advantages make it ideal for high-current and fast-switching applications. It also features an extremely low drain-source capacitance which helps to reduce switching losses and ensures reliable operation. Furthermore, the IXFN32N80P has an integrated body diode, which eliminates the need for external body-diode protection devices and improves the efficiency of the system.

The IXFN32N80P works using a simple mechanism. When a positive input voltage is applied to the gate of the device, a channel is opened between the source and the drain. This allows the necessary current to flow and activates the device, completing the circuit. This process is repeated as the input voltage is changed, allowing the user to control the current flow through the device. This makes the IXFN32N80P an ideal choice for applications where precision control of current flow is needed.

In summary, the IXFN32N80P is an ideal choice for a wide range of applications, thanks to its enhanced On-state performance, low-capacitance linear drain-to-source characteristics, integrated body diode and bucket-type design. Its versatile design makes it suitable for digital, analog and power drivers, as well as DC-DC converters and power amplifiers. Furthermore, its simple mechanism of operation makes it an ideal choice for applications that require precision control of current flow.

The specific data is subject to PDF, and the above content is for reference

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