Allicdata Part #: | IXFN70N60Q2-ND |
Manufacturer Part#: |
IXFN70N60Q2 |
Price: | $ 27.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 70A SOT-227B |
More Detail: | N-Channel 600V 70A (Tc) 890W (Tc) Chassis Mount SO... |
DataSheet: | IXFN70N60Q2 Datasheet/PDF |
Quantity: | 26 |
1 +: | $ 25.28190 |
10 +: | $ 23.64010 |
30 +: | $ 21.86350 |
100 +: | $ 20.49700 |
250 +: | $ 19.13060 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 890W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 265nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXFN70N60Q2 is a new n-channel insulated gate bipolar transistor (IGBT) that combines low on-state resistance and fast switching times to ensure improved system efficiency in the most demanding power conversion applications. This device is ideal for use in a wide variety of systems, including switch-mode power supplies and high-performance motor controls. A brief overview of this IGBT is provided here, with more detailed specifications and operating conditions discussed in the datasheet.The IXFN70N60Q2 is characterized by high performance, low conduction and switching losses, and ease of paralleling. It features an advanced design with a robust structure that is optimized for improved power-handling capability and enhanced switching times. The unique topology of this part also provides excellent EMI noise suppression capabilities.This device is based on a proprietary technology that enables the IGBT to operate at high frequencies and still provide low on-state resistance and output capacitance. It also delivers excellent linearity and fast switching characteristics, making it suitable for medium-to-high current applications.The IXFN70N60Q2 can be used in a range of applications, including solar inverters, motor drives, welding equipment, and UPS systems. This device is also suitable for lighter-load control systems, including AC and DC drives, frequency converters, and switch-mode power supplies. The IGBT’s maximum collector-emitter voltage (Vce(on)) is rated at 600V and the maximum collector current (IC) is rated at 70A.The IXFN70N60Q2 is capable of high-speed switching, with a fast switching speed (trr < 25ns) and an average switching loss of only 28µJ. It also features a reverse diode with a forward voltage (Vf) of 1.2V and a recovery time (trr) of only 75ns. This IGBT features an operating temperature range of -40°C to +150°C and can be used in a wide variety of environments.The IXFN70N60Q2 can be safely paralleled, allowing for current outputs of up to 140A. This IGBT also offers superior thermal and overload protection, making it a reliable choice for use in high-power and high-current applications. The device’s on-state resistance (RDS(on)) is rated at only 110mΩ, and its Miller capacitance is rated at only 550pF.In conclusion, the IXFN70N60Q2 is a top-performing IGBT that is ideal for use in high-power and high-current applications. With low on-state resistance, fast switching times, and excellent noise suppression capabilities, this device is sure to provide users with superior performance.
The specific data is subject to PDF, and the above content is for reference
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