IXFN27N80Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFN27N80Q is a high-speed, high-voltage, insulated-gate field-effect transistor (IGFET) designed for demanding switching applications. The IXFN27N80Q is available in a standard, Right-Angle-Top, surface-mount (SMD) package, or an isolated-package option, making it suitable for many different applications.

The IXFN27N80Q is designed to switch currents up to 27A in a very short time period and can handle up to 80V of voltage. It is well suited for high-power motor control, power supply, switching power regulator, and server power applications. This device also offers excellent thermal performance in a very small package.

At its core, the IXFN27N80Q is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Invented in the 1960s, MOSFETs are a type of transistor which works by using a thin layer of gate oxide to switch between open and closed states. When voltage is applied to the gate, it attracts electrons from the device\'s source terminal, forming a channel between the source and the drain. This channel allows electrons to flow between the source and the drain, which activates the transistor switch.

The IXFN27N80Q is a single N-channel MOSFET, meaning that the electrons must flow from the source to the drain. This is opposed to a P-channel MOSFET, where the electrons would flow in the opposite direction. As such, the IXFN27N80Q is mainly used for high-current, high-voltage switching applications.

The IXFN27N80Q has very low on-state resistance (RDS_on) and gate-capacitance (Cgs) figures, making it suitable for switching applications with high frequencies and low voltage drops. It also boasts a fast switching time (tD(ON)), which helps to minimize switching losses and minimize EMI. Additionally, the IXFN27N80Q has a high drain-source breakdown voltage (BVDSS), which ensures that the device is able to handle large voltage spikes and transients.

The IXFN27N80Q is also designed to guard against electrostatic discharge (ESD) and is rated to handle up to 4KV of ESD. This helps to keep the device safe from potential damage from static electricity, which can occur during installation, assembly, and handling.

In conclusion, the IXFN27N80Q is a high-speed, high-voltage insulated-gate field-effect transistor (IGFET) designed for demanding switching applications. It is a single N-channel MOSFET, which makes it suitable for high-current, high-voltage switching applications. Its low on-state resistance (RDS_on) and gate-capacitance (Cgs) figures, along with its fast switching time (tD(ON)), make it well-suited for switching applications with high frequencies and low voltage drops. Additionally, it has a high drain-source breakdown voltage (BVDSS) and is rated to handle up to 4KV of electrostatic discharge (ESD).

The specific data is subject to PDF, and the above content is for reference