IXFN64N50P

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The IXFN64N50P is a single-source \'smart power\' MOSFET. Smart power MOSFETs provide outstanding performance, a high degree of reliability, and a unique combination of features over traditional power MOSFETs for many applications. One such application for the IXFN64N50P is motor control, however, this excellent performance is not limited to motor control. As with other types of MOSFETs, the IXFN64N50P can be used in a variety of applications as a high-speed switch for applications such as triggering, dynamic logic control and driving other power control stages.

A power MOSFET is known as a voltage-controlled transistor because it can be used as a switch to switch current on and off in response to an input voltage. The IXFN64N50P is a unipolar device, meaning that it can only conduct current in one direction and as such is used in many applications as a \'solid-state relay\'.

The IXFN64N50P is based on the latest trench-gate MOSFET (TMOS) technology, which was developed to provide excellent performance in both very high-current applications and very low-voltage applications. TMOS technology creates a larger and more efficient path for the current to pass through. This is accomplished by increasing the charge carriers in the semiconductor material used to form the basic structure of the device\'s transistor.

The IXFN64N50P is built using the latest in power MOSFET technology and provides extreme temperature and operating voltage performance. It also offers high levels of current handling capability due to its advanced "power D-MOS" design. The typical linear resistance of the device is very low, providing very low switch-on losses and improved efficiency. The driver MOSFET inside the IXFN64N50P is matched to the power MOSFET and is designed to reduce EMI/EMC noise and provide optimized switching performance.

For the most challenging motor control applications, the IXFN64N50P offers high-speed switching performance, with a maximum on-time of 75ns, combined with extreme temperature and negligible on-resistance. This enables the IXFN64N50P to provide high performance over a wide temperature range for a variety of extreme operating conditions. This feature allows for superior efficiency and power density in motor control applications.

The IXFN64N50P is also designed to be highly robust, with a wide operating voltage range from 5V up to 24V. It is designed with power MOSFETs with a common-drain architecture which is far superior to any other single-source device available on the market today. This common-drain configuration enables the IXFN64N50P to provide a robust, reliable solution with extremely low on-resistance and excellent stability. And like all MOSFETs, the IXFN64N50P is completely immune to inductive and capacitive transients, making it an ideal choice for applications requiring high speed switching.

In conclusion, the IXFN64N50P is an innovative, advanced power MOSFET which is designed for high-speed, high-performance operation in motor control applications. Its advanced "power D-MOS" design, combined with a robust common-drain architecture, enables the IXFN64N50P to provide superior performance at extremely low-voltage and high-current levels. Moreover, its extremely low switch-on losses, combined with a wide temperature range and extremely low on-resistance, make the IXFN64N50P an ideal choice for motor control applications.

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