Allicdata Part #: | IXFN60N60-ND |
Manufacturer Part#: |
IXFN60N60 |
Price: | $ 32.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 60A SOT-227B |
More Detail: | N-Channel 600V 60A (Tc) 700W (Tc) Chassis Mount SO... |
DataSheet: | IXFN60N60 Datasheet/PDF |
Quantity: | 27 |
1 +: | $ 29.79900 |
10 +: | $ 27.86870 |
30 +: | $ 25.77460 |
100 +: | $ 24.16370 |
250 +: | $ 22.55270 |
Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFN60N60 is one of the most commonly used power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in the market today. Because of this, it is important to understand the application field and working principles of IXFN60N60. This article will discuss the various application fields of this power MOSFET and the working principles behind it.
Application Field of IXFN60N60
IXFN60N60 can be applied in a variety of application fields because of its ability to switch large current and voltage, and also its high efficiency with low heat dissipation. It is commonly used in distributed power, solar inverters and high performance power amplifiers. It can also be used in other automotive, industrial, and power supply applications. The IXFN60N60 is typically used to replace the IGBT (Insulated Gate Bipolar Transistor) in many power electronics and supply applications because it has better performance and economization.
Working Principle of IXFN60N60
IXFN60N60 is a type of n-channel MOSFET, which is a type of field-effect transistor (FET). A key feature of FETs is that they are voltage controlled devices. This means that the signal voltage applied to the gate controls the current flow through the channel. The IXFN60N60 has an n-channel between the source and drain terminals. The current flow between the source and drain is controlled by the voltage applied between the gate and the source. The current flow is proportional to the voltage applied to the gate, and can be shut off completely when the gate is in its cut-off state. In addition, the IXFN60N60 has an integrated protection diode across the drain and source, which can protect the device from being damaged by large inductive signals.
The IXFN60N60 is a very reliable and efficient power MOSFET that can be used in a variety of applications. Its application field and working principle make it an ideal choice for many power electronics applications. It has a high efficiency and low heat dissipation, making it an economical choice compared to other power electronic devices. In addition, the IXFN60N60 has the ability to switch large current and voltage, making it perfect for applications that require high performance, reliability and robustness. It is safe to say that IXFN60N60 is one of the most commonly used MOSFETs in the market today, and it can be applied in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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