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Introduction to IXFN39N90

The IXFN39N90 is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in applications including those in the automotive and industrial sectors. In the MOSFET category name, the N represents the type of electrical behavior or the type of channel that is present between the source and the drain conduction terminals, in this case an N-type. This particular MOSFET is ideal for switching, amplifying, and surface mount applications.

Characteristics of the IXFN39N90

The package configuration for the IXFN39N90 is surface mount and capable of operation at maximum junction temperature up to 175°C. It is a logic level MOSFET, designed specifically to switch logic signals with a minimal voltage drop. Based on its package design, the IXFN39N90 has a drain-source lead-to-lead spacing at a maximum of 3 mm. It is of a small size, with a package length of 5.9 mm and a package width of 4.9 mm, making it convenient for applications that require a low amount of space.

IT has a drain-source voltage of 40V, with 175 mOhms maximum drain source on-state resistance. This allows for EMI (electromagnetic interference) reduction, fast switching applications and low power loss. With a maximum continuous drain current of 17A, the IXFN39N90 is considered high-power, making it a great fit for high power handling applications.

Additional characteristics of the IXFN39N90 include its Gate-source voltage of +/-20V, with a minimum capacitance of 6660 pF, ancillary features such as ESD protection, and a minimum breakdown voltage of 2.5V.

Applications and Working Principle of the IXFN39N90

The IXFN39N90 can be used in a variety of applications due to its features, but most prominently as a switch transistor. It can be used to switch any type of load, but is especially suited to switching higher loads that need to be switched at fast speeds. Its main application is for high current and voltage switching, with other suitable applications for the IXFN39N90 including inverter circuits, switching power supplies, and power management modules.

In the most basic understanding of how MOSFETs work, the IXFN39N90 will operate according to the same principle. In a MOSFET, the source is connected to ground and the drain is connected to the voltage rail in electrical circuits. When a voltage, typically a small DC battery, is applied to the Gate/Gate electrode of the transistor, electrons rapidly accumulate at the Gate, resulting in a strong electric field between the N-type bulk and the conductive Gate. The electric field then acts as a barrier between the source and the drain, preventing electrons from flowing through and thus prevents current.

In the IXFN39N90, the build up of electrons will be done quickly and effectively, allowing it to be switched on and off rapidly and allow enough current to flow between the source and the drain to power the load. The Gate/Gate is blanketed and protected by an ESD (electrostatic discharge) protection layer which will ensure minimal interference in the signal and the EMI layer helps keep the IXFN39N90 operating at a low level.

Conclusion

In conclusion, the IXFN39N90 is an excellent choice for applications that require a MOSFET with reliable control and low power consumption. Knowledge of the working principle and characteristics of the IXFN39N90 will allow appropriate selection and utilization of the device in various types of applications.

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