
Allicdata Part #: | IXFN200N07-ND |
Manufacturer Part#: |
IXFN200N07 |
Price: | $ 18.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 70V 200A SOT-227B |
More Detail: | N-Channel 70V 200A (Tc) 520W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 268 |
1 +: | $ 18.03000 |
10 +: | $ 17.48910 |
100 +: | $ 17.12850 |
1000 +: | $ 16.76790 |
10000 +: | $ 16.22700 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 480nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 70V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Semiconductor transistors, including field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs), are widely used in various electronic circuits due to their controlled current gain, relatively low power consumption and small size. The IXFN200N07 is a horizontal power N-channel MOSFETs that is used in a wide range of applications, including power management and motor control. This article will discuss the IXFN200N07\'s working principle, application field and features.
Working Principle of the IXFN200N07
The IXFN200N07 belongs to the N-channel MOSFET family. An N-channel MOSFET is a MOSFET with a gate electrode that is connected to a source which is of opposite type to the type of the drain. The source and drain electrodes are made of N-type semiconductor material, forming an N-channel. When a positive gate voltage is applied, electrons are drawn from the source to the gate, creating a depletion region between the source and the gate and generating a threshold voltage. When this voltage is exceeded, a channel is created through which current can flow freely from the source to the drain. By controlling the current flowing from the source to the drain, a wide range of electronic circuits can be powered.
Application Fields of the IXFN200N07
As mentioned previously, the IXFN200N07 is a horizontal power N-channel MOSFET. It is designed primarily for use in power management and motor control applications. It is often used as a switch in power supplies, controlling the current flow to the load. It is also used to control the current in motor control applications, such as driving servos, stepper motors and brushless DC motors.
Features of the IXFN200N07
The IXFN200N07 has several features that make it well suited for such applications. It has a low on-state resistance (RDs(on)), which helps to minimize power loss. It also has a low input capacitance (Ciss), which allows it to switch quickly and efficiently. The IXFN200N07 is also designed to be thermally efficient, with a low thermal resistance and wide temperature range.
In addition, the IXFN200N07 has a wide range of packages available to suit different applications. The BGA and D2P(V) packages are designed for high-power applications, while the TO-220 and D2PAK family packages are designed for more standard applications.
The IXFN200N07 is an excellent choice for power management and motor control applications. It has a low on-state resistance, low input capacitance and wide temperature range, making it a reliable and efficient device for such applications. Additionally, it is available in a wide range of packages to suit different applications.
The specific data is subject to PDF, and the above content is for reference
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