| Allicdata Part #: | IXFN55N50F-ND |
| Manufacturer Part#: |
IXFN55N50F |
| Price: | $ 26.31 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS-RF |
| Short Description: | MOSFET N-CH 500V 55A SOT227B |
| More Detail: | N-Channel 500V 55A (Tc) 600W (Tc) Chassis Mount SO... |
| DataSheet: | IXFN55N50F Datasheet/PDF |
| Quantity: | 100 |
| 1 +: | $ 23.91480 |
| 10 +: | $ 22.12120 |
| 30 +: | $ 20.32760 |
| 100 +: | $ 18.89270 |
| 250 +: | $ 17.33820 |
| Vgs(th) (Max) @ Id: | 5.5V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 600W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
| Series: | HiPerRF™ |
| Rds On (Max) @ Id, Vgs: | 85 mOhm @ 27.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFN55N50F is a type of Field Effect Transistor (FET), which is a type of transistor used to control current flow by using an electric field. It is commonly referred to as a MOSFET, or Metal-Oxide-Semiconductor FET, and differs from a standard FET in that it requires only a small amount of power to operate. The IXFN55N50F is a single-channel device, meaning that it only contains one gate terminal, which is how it is controlled. The primary application of the IXFN55N50F is to switch large currents on and off with a very low voltage. In addition, it has a very low input capacitance, making it suitable for high frequency applications.
The basic principle by which the IXFN55N50F operates is the same as the general FET. A voltage is applied to the gate terminal, and this causes a small electric field to be created between the source and drain leads. This electric field causes a charge to flow between the two leads, as current is able to flow from the source to the drain. The amount of current that can be controlled is determined by the size of the gate voltage applied. The IXFN55N50F has an incredibly low input capacitance which makes it suitable for high frequency applications, as it can respond much faster than other types of FET.
The IXFN55N50F has a wide range of applications due to its ability to switch high current with low voltage. It is predominantly used in power electronics applications such as power inverters, solar energy converters, and other types of power converters. It’s also used in amplifiers and other types of audio equipment. In industry, it’s used as a switch in motor control systems, as well as a number of other types of equipment. The IXFN55N50F also has a range of medical applications, including medical imaging applications, medical therapy applications, and medical diagnostics. As technology continues to progress, it’s likely that the IXFN55N50F will be used in an ever increasing number of applications.
The IXFN55N50F is a highly advanced type of FET that offers superior performance in a wide range of applications. Its incredibly low input capacitance makes it suitable for high frequency applications, and its ability to switch large currents with a low voltage makes it ideal for power electronics, amplifiers, and other types of audio equipment. It is also finding increasing use in medical applications, such as imaging and therapy. As technology progresses, it’s likely that the IXFN55N50F will become even more widely used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IXFN55N50F Datasheet/PDF