IXFN120N20 Allicdata Electronics
Allicdata Part #:

IXFN120N20-ND

Manufacturer Part#:

IXFN120N20

Price: $ 19.78
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 120A SOT-227B
More Detail: N-Channel 200V 120A (Tc) 600W (Tc) Chassis Mount S...
DataSheet: IXFN120N20 datasheetIXFN120N20 Datasheet/PDF
Quantity: 174
1 +: $ 17.98020
10 +: $ 16.63200
30 +: $ 15.28320
100 +: $ 14.20430
250 +: $ 13.03560
500 +: $ 12.40630
Stock 174Can Ship Immediately
$ 19.78
Specifications
Vgs(th) (Max) @ Id: 4V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 600W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 17 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFN120N20 is a type of MOSFET developed by IXYS Corporation, a world leader in power semiconductor technology. As a piece of semiconductor component, IXFN120N20 is designed to control the flow of electrical current in a circuit, acting as a switch and providing instant power. It belongs to the Single MOSFET product family, and its use include various fields. This article discusses the application field and working principle of IXFN120N20.

Application Fields

IXFN120N20 is a perfect solution for applications such as synchronous rectification and power switching, DC-DC converters, motor drivers, and high voltage ripple filters. It can also be used in home appliances and industrial automation systems, including air conditioners, washing machines and elevators. Its low voltage rating points to a wide range of uses in electronic systems.

IXFN120N20 can be used in a wide variety of motor control applications, thanks to its high power density, low on-state resistance (RDS(on)) and fast switching capabilities. It is also suitable for high frequency switching or high voltage applications. It features a low thermal resistance and high voltage rating, making it a great choice for applications with high power consumption.

Working Principle

The IXFN120N20 is a type of field-effect transistor (FET) that is designed for switching and amplification purposes. A FET is a type of transistor that uses an electric field to regulate the flow of current. This MOSFET is designed to operate at up to +20V and has a low drain-source on-resistance of 8mΩ. It is also designed with a P-channel structure, which assures fast switching times and low power dissipation.

To control the flow of current through the transistor, an electric field is applied between the drain and source terminals. When the electric field applied is equal to the threshold voltage, current starts to pass through the transistor. By adjusting the input signal, the current can be regulated in the circuit.

The IXFN120N20 is designed to be used in applications such as DC-DC converters, motor drivers, and high voltage ripple filters. Its fast switching capabilities and low on-state resistance make it a great choice for applications that need to control large amounts of current. The low voltage rating also makes it suitable for applications with high power consumption.

Conclusion

In conclusion, IXFN120N20 is a type of MOSFET designed by IXYS Corporation, which belongs to the Single MOSFET family. It is perfect for applications such as synchronous rectification and power switching, DC-DC converters, motor drivers, and high voltage ripple filters. It features a low voltage rating, a low thermal resistance and a high voltage rating, making it a great choice for applications with high power consumption. The IXFN120N20 is also designed with a P-channel structure to assure fast switching times and low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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