IXFN40N110P

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IXFN40N110P is a power MOSFET manufactured by IXYS Corporation, a leader in the power semiconductor industry. It is a factory-trimmed thermally enhanced single N-channel MOSFET device with an avalanche rating. It is primarily utilized in switching applications, where low on-state resistance and high dV/dt capability are essential. IXFN40N110P is available in a TO-247 package.

Features of IXFN40N110P

• VDSS (Drain-Source Voltage) = 400V
• Max. VGS (Gate-Source Voltage): ±20V
• RDS (on) (Drain-Source Resistance): 11mΩ typical @ 4.5V VGS
• Max. Avalanche Energy: 100mJ
• Pulsed Drain Current (ID): 20A
• Gate Charge (Qg) (Max.): 50nC
• Threshold Voltage (Vth): 2.2V
• Drain-Source Diode Forward Voltage (VDS): 1.25V typically @ 10A
• Low Input Capacitance (Ciss): 950pF typically @ 4.5V VGS
• Package: TO-247

Application Field of IXFN40N110P

Due to its low on-state resistance, IXFN40N110P enables high current handling capability and low power dissipation in the circuit. Its factory-trimmed thermally enhanced capability makes it best suited for contactors, off-line switched mode power supplies, solid-state relays, lamp drivers circuits and buck, boost, or flyback DC-DC converter applications. The high voltage capability and low input capacitance of the device makes it ideal for motor drivers and automotive electronic power supplies.

Working Principle of IXFN40N110P

IXFN40N110P is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It consists of source, drain and gate terminals, with source and drain separated by a thin silicon dioxide layer. This layer is called the “gate oxide” which acts as insulator. The type N-channel MOSFET has a lightly doped negative (N-) body downstream of its gate oxide. A positive voltage applied to the gate terminal attracts electrons into the channel region under the gate, thus forming a low resistance electrical path from the source to the drain. When the voltage is removed, the electrons return the channel abandoning the low resistance state. This is known as the “enhancement mode” operation of a MOSFET. The amount of current passing across the device is controlled by the amount of voltage applied to the gate terminal.

IXFN40N110P is thermally enhanced by a direct copper bond (DCB) substrate, with a CoolMOS Power MOSFET CE Core technology used in power supplies and DC-DC converters. This combined thermal enhanced substrate reduces the junction to case Thermal Resistance (RthJC) improving heat dissipation.

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