IXFN73N30Q

IXFN73N30Q is a FET device that belongs to the single FET family. This type of FET has a dual gate structure, allowing for independent control of the drain and source terminals. This type of FET has been known for its low on-state resistance, low threshold voltage, low input capacitance and low reverse blocking voltage characteristics.

The IXFN73N30Q is a double-gated lateral MOSFET and belongs to the 30V Vgsmax subfamily. It is a Dual Gate RDSON product, where RDSON stands for On-State Resistance. This type of FET is suitable for high speed switching applications, where low conduction losses are desired. It also makes an excellent choice for a wide range of other applications such as automotive, industrial, and consumer electronics.

It is usually used in the design of power circuits, inverters, rectifiers, resonant circuits, DC-DC converters, and switching regulators. The IXFN73N30Q has a 300mΩ RDSON, and a maximum Vin rating of 75V, thus making it suitable for high-voltage applications as well. Additionally, it has a high-speed switching time of 5.8ns, and a body-drain voltage of 55V. It is also capable of carrying current up to 3.2A, allowing for efficient power distribution.

As far as its working principle goes, the IXFN73N30Q has two gates. One Gate is the Source Gate which is the input, and the second Gate is the Drain Gate, which is the output. It works by having both gates being independently controlled. When the Source Gate is turned on, it switches on the drain, allowing current to flow to the load. Conversely, when Source Gate is turned off, it switches off the drain, thus stopping current from flowing. This action allows for high-speed switching, with efficient power management.

The IXFN73N30Q is designed to provide the designer with a low on-state resistance and low capacitance that is necessary for an efficient power circuitry. It is a very reliable device, with high surge endurance and a low threshold voltage. This makes it an ideal FET choice for various high-power switching and other applications. Furthermore, its low on-state resistance and low input capacitance have made it well suited for high-speed switching.

In conclusion, the IXFN73N30Q is a versatile FET device that features low on-state resistance, low capacitance, and low reverse blocking voltage. Its dual-gated structure allows for efficient power circuitry design and high-speed switching operation. It is a well-suited device for high-power switching applications, and a reliable choice for many power electronic applications.