| Allicdata Part #: | IXFN66N50Q2-ND |
| Manufacturer Part#: |
IXFN66N50Q2 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 66A SOT-227B |
| More Detail: | N-Channel 500V 66A (Tc) 735W (Tc) Chassis Mount SO... |
| DataSheet: |  IXFN66N50Q2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 735W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 199nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXFN66N50Q2 is a logic level field effect transistor (FET) from Infineon Technologies. It is specifically designed for high-side load switch applications in automotive and industrial applications. It is a monolithic FET with a built-in resistor for improved high-temperature reliability and speed.
FETs work by using an applied electric field to control the flow of charge carriers (electrons or holes). When an electric field is applied between two gates, the resistance to the flow of charge carriers decreases and current can flow through the device. When the electric field is removed, the resistance of the device increases and the device turns off. The IXFN66N50Q2 makes use of this principle to provide low on-state resistance and quick switching times.
The IXFN66N50Q2 is a p-channel enhancement-mode MOSFET with a maximum drain-source voltage of 50V and a maximum drain current of 66A. It is made using a mold compound package for improved heat dissipation and reliability. It also has a low gate threshold voltage of 1.5V, making it suitable for applications requiring low power consumption. It also features a built-in resistor that provides added protection against voltage spikes.
The IXFN66N50Q2 is ideal for applications requiring low resistance, low gate threshold voltage, and low power consumption. It is suitable for use in automotive switches, power switches, converters, DC/DC switching converters, battery charging circuits, and other load switch applications. It can also be used in portable devices and other industrial applications.
The IXFN66N50Q2 is a versatile FET that can easily be used in a variety of applications. It is designed to offer a low on-state resistance, fast switching times, and improved thermal performance. Its low gate threshold voltage and built-in resistor make it particularly suitable for low power applications. This makes it an excellent choice for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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