IXFN180N20

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The IXFN180N20 is a high voltage P-channel junction field-effect transistor (FET) designed to be used as a load switch in the circuits. It is extremely robust and has the capability to be used in numerous applications.

The IXFN180N20 is a vertical DMOS (double-diffusion metal-oxide-semiconductor) FET with a lower on-resistance. The device\'s structure allows it to enhance the device\'s voltage and temperature operating range as compared to typical P-channel FETs. The IXFN180N20 is able to handle voltages up to 600V, making it a great choice for power supplies and other high voltage applications.

Further, the IXFN180N20 is a N-channel FET with an extremely fast switching speed. This makes it ideal for high speed switching applications, such as motor control, power MOSFET/IGBT gate drive circuits, switching converters, etc. The device has a typical RDS(on) of 180mΩ at 10V, allowing it to operate at high frequency with minimal power loss. Moreover, the IXFN180N20 features an extremely low gate threshold voltage (Vgsth) of just 1.8V, making it suitable for logic level applications. With a typical capacitance of just 2pF and a low on-resistance at higher temperatures, the IXFN180N20 is an ideal choice for applications requiring high frequency and low power.

The IXFN180N20 also features an integrated temperature sensing circuit, which allows the device to reduce its drain current when the junction temperature exceeds its specified maximum. This makes the device a great choice for applications requiring thermal protection, such as automotive battery systems. In addition, the device has an integrated protection circuitry which offers overcurrent and reverse current protection.

The IXFN180N20 can be resourced in both through-hole and surface mount packages. In either case, the device requires a -55°C to +150°C junction temperature range and it should be mounted on a good heat sink to ensure proper heat dissipation. The device can be used in a wide range of applications, such as switched mode power supplies, DC/DC converters, LED lighting, automotive battery management, and static battery protection, among others.

In summary, the IXFN180N20 is an extremely robust P-channel FET which is capable of handling high voltage applications, high speed switching applications, and logic level applications. Further, the device has a low on-resistance and a low gate threshold voltage. The IXFN180N20 has an integrated temperature sensing and protection circuitry, making it suitable for applications requiring thermal protection. The device is available in both through-hole and surface mount packages and it should be mounted on a good heat sink for proper heat dissipation.

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