IXFN80N50

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IXFN80N50 is an enhancement mode, N-channel MOSFET three-terminal device used in many applications such as voltage level sensing, audio amplifying, pixel driver and analog amplifiers. The IXFN80N50 is equipped with a low on-resistance and high-speed charging/discharging capability.

Application field of IXFN80N50

IXFN80N50 is widely used in various fields including:

1. Power MOSFETs: The device is mainly used in Insulated Gate Bipolar Transistors (IGBTs). It is also widely used in motor control and power electronics applications, such as server power supplies, switch mode power supply and automotive power circuits, due to its low on-resistance.
2. Audio amplifying: The device can provide high power and low noise audio amplifying in the audio amplifier circuit, suitable for increasing the volume of sound.
3. Voltage level sensing: Due to its low on-resistance, the IXFN80N50 can be used in voltage level sensing. It can accurately detect the voltage level, useful for multiple applications such as smart phone battery charge monitoring and digital circuit over-voltage protection.
4. Analog amplifiers: The device is widely used in analog amplifiers, due to its high-speed charging/discharging capability. It is suitable for amplifying small-signal, such as those generated by sensor.
5. Pixel driver: The device is suitable for a variety of pixel driver application, due to its low on-resistance and high-speed charging/discharging capability. It can provide highly detailed and vivid display.

Working Principle of IXFN80N50

The IXFN80N50 is an N-channel MOSFET three-terminal device. The MOSFET works based on the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) effect. When a voltage potential is applied at the gate terminal of the MOSFET, the source-drain current increases, due to the reduction in the channel resistance. Even though the voltage is applied between the source and drain, the device acts like an isolation device that due to the insulation layer.

By applying the operating voltage at the gate, the MOSFET can be in three distinct states, namely, cut-off (OFF) state, linear (SUBTHRESHOLD RDS(ON)) state and saturation (ON) state, then can be used for a wide range of application.

Cut-off (OFF) State

In the cut-off (OFF) state, where the VGS is lower than the gate threshold voltage, the MOSFET can prevent current from passing between the source and drain. This state is suitable for blocking the current and acting as an isolation device.

Linear (SUBTHRESHOLD) State

In the linear (subthreshold) state, the VGS is slightly greater than the gate threshold voltage, and the MOSFET is in its linear region state. In this state, the device can act as a variable resistor, with the resistance depending on the gate voltage. This state is suitable for better control of the source-drain current.

Saturation (ON) State

In the saturation (ON) state, the VGS is further increased. This causes the MOSFET to be in its saturation region, where the resistance between the source and drain is the lowest. In this state, the device can pass the maximum current and acts as a switch.

Therefore, IXFN80N50 can be applied to multiple applications by adjusting its operating voltage, depending on the application that it is used for.

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