IXFN36N110P

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The IXFN36N110P is a FET (Field-effect transistor) manufactured by IXYS Corporation, designed to provide high power handling and reliable switching performance across a wide range of applications.

FETs are a type of transistor that operates by separating the conduction and control elements into the source and drain terminals. When a voltage is applied to the FET’s gate terminal, it affects the current flow through the device by changing the resistance between the source and drain terminals. This enables FETs to act as switches, amplifiers and other types of active circuits.

The IXFN36N110P is a metal-oxide semiconductor FET (MOSFET). It belongs to the family of single-channel, high-voltage, logic-level enhancement mode MOSFETs.

The device offers a simple configuration with two terminals, a source and drain terminal, and one gate terminal. The maximum drain-source voltage of the IXFN36N110P is 36V with a maximum drain current of 8A, making it suitable for applications operating at higher voltages and currents.

In terms of its application field, the IXFN36N110P can be used in a wide range of applications, including high-side and low-side switches, motor drives, brushless DC motor (BLDC) control, switch-mode power supplies (SMPS), audio amplifiers and power tools.

The MOSFET offers an easy-to-implement switch circuit with high efficiency. Its low switching losses ensure that the device remains cool and energy efficient. Additionally, the device enables low gate charge and capacitance, resulting in low switching speed and low on-time delays.

In terms of its working principle, the IXFN36N110P operates using the electrostatic principle. The gate terminal of the MOSFET works as an “electronic gate” that controls the conduction between the source and drain terminals. When a voltage is applied to the device’s gate terminal, it controls the electric current flowing between the source and drain terminals.

Due to its low on-resistance and fast switching speed, the IXFN36N110P offers excellent performance in terms of switching speed and power stability. Furthermore, its integrated protection features such as reverse height sensing (RDS(ON)) and built-in ESD protection, ensure that the device remains safe and reliable in a wide range of applications.

In conclusion, the IXFN36N110P is a single-channel MOSFET designed to provide high power handling and reliable switching performance. It is suitable for a wide range of applications and offers low on-resistance, integrated protection features and efficient operation. Overall, the device is an ideal choice for applications operating at higher voltages and currents.

Wherever power and performance matters, IXFN36N110P is the ideal choice.

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