
Allicdata Part #: | IXFN73N30-ND |
Manufacturer Part#: |
IXFN73N30 |
Price: | $ 14.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 73A SOT-227B |
More Detail: | N-Channel 300V 73A (Tc) 500W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 24 |
1 +: | $ 13.37490 |
10 +: | $ 12.15900 |
30 +: | $ 11.24720 |
100 +: | $ 10.33510 |
250 +: | $ 9.42326 |
500 +: | $ 8.81531 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 360nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFN73N30 is a part of the IXFN73N30 series of MOSFETs (Metal-Oxide-Semiconductor Field-Effe ct Transistors) produced by IXYS Integrated Circuits and is a single-channel, high-side, normally-off MOSFET, designed for applications in battery management, DC-DC converters, motor control and welding.
MOSFETs act as switches which can turn a current on and off. The IXFN73N30 features an integrated, low resistance, normally-off, P-channel power MOSFET, offering fast switching performance and improved system efficiency.
The IXFN73N30 offers a maximum drain source voltage of 30V and a continuous drain current of up to 10A. This makes it ideal for automotive, industrial, and consumer applications that require large current handling capabilities at a low voltage rating. The device is also RoHS compliant and can be used in a wide range of temperatures from -55℃ to 150℃.
At its core, the IXFN73N30 is a field effect transistor. It is composed of a source, drain and gate. A voltage applied to the gate allows current to flow between the source and drain and the amount of current that flows is proportional to the amount of voltage applied. This makes the IXFN73N30 useful in applications where current needs to be regulated or a logic signal needs to be converted into a current output.
The IXFN73N30 is designed to run at a high-power densities and provides superior switching performance due to its low on-resistance and low gate charge. These features make it ideal for high-performance applications that require low power consumption. Additionally, it provides high-dielectric-strength oxide-isolated DMOS construction, which helps improve its reliability.
In terms of installation, the IXFN73N30 requires a mounting hole size of 5.05mm and an appropriate heat sink. It is important that it is correctly mounted in order to avoid damaging the device due to excessive heat. In order to increase the device\'s performance, it must be oversorted during assembly. This is done by placing an oversize MOSFET on the board and then trimming it to the correct size.
In summary, the IXFN73N30 is a single-channel, high-side, normally-off MOSFET that is designed for applications in battery management, DC-DC converters, motor controls, and welding. It offers high switching speeds, improved system efficiency, low gate charge and a wide operating temperature range. Additionally, it is RoHS compliant and requires an oversize mounting hole for installation. As such, it is an ideal solution for high-performance applications that require low power consumption.
The specific data is subject to PDF, and the above content is for reference
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