Allicdata Part #: | IXFN200N10P-ND |
Manufacturer Part#: |
IXFN200N10P |
Price: | $ 13.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 200A SOT-227B |
More Detail: | N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount S... |
DataSheet: | IXFN200N10P Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 12.20940 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 680W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFN200N10P is a typical n-channel insulated-gate field effect transistor (IGFET), commonly referred to as a MosFET. The IXFN200N10P has a source and drain connected using a source-drain distance of 200 nanometers and a breakdown voltage of 10 volts. It is built using a planar polycrystalline silicon technology and is suitable for use in both high-frequency RF amps and switching applications at up to 10MHz.
The IXFN200N10P is typically used in DC circuits at lower voltages, as well as digital switching applications at higher voltages. In digital circuits, the IXFN200N10P can be used to switch a wide variety of loads, such as relays, LEDs, and other devices. It is also suitable for use in power MOSFET applications.
The IXFN200N10P is designed to provide excellent performance and low power consumption in a wide range of applications. It features an on-state resistance (Rds(on)) of 38 mΩ, an input capacitance (Ciss) of 80 pF, and an output capacitance (Coss) of 20 pF. The IXFN200N10P is packaged in a TO-242 package for easy mounting.The IXFN200N10P is a high-performance device with high switching frequency and low on-state voltage drop.
The working principle of the IXFN200N10P is similar to that of other MOSFETs. The device features a gate, an n-type channel, an n-type source, and an n-type drain. The gate is connected to a control voltage and the source and drain to a power source. When the voltage at the gate is greater than the threshold voltage, the n-type channel beneath the gate forms a conductive path for current to flow between the source and the drain.
The IXFN200N10P is ideal for a wide range of switching applications, including DC load switching, AC load switching, and power MOSFET. It is the perfect choice for applications that require fast switching at low power consumption, such as in automotive and industrial settings. With its high performance and low power consumption, the IXFN200N10P is an excellent choice for use in many switching applications.
The specific data is subject to PDF, and the above content is for reference
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