
Allicdata Part #: | IXFN120N25-ND |
Manufacturer Part#: |
IXFN120N25 |
Price: | $ 19.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 120A SOT-227B |
More Detail: | N-Channel 250V 120A Chassis Mount SOT-227B |
DataSheet: | ![]() |
Quantity: | 1000 |
10 +: | $ 18.12380 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 120A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
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− IXFN120N25 application field and working principle
The IXFN120N25 is an N-channel enhancement mode power field effect transistor (FET). This type of transistor comes eminently suitable for high power switching up to 25V. It is widely used wherever high current and low on-state resistance is needed. It is suitable for switching circuits and ideal for switching appliances like white goods, air conditioners and other consumer appliances.
The IXFN120N25 feature a low RON figure which makes it perfect for application that require high current. As the N-channel power FET is perfectly suited for working with high current, it is also highly practical for driving high power loads.
The power transistor has a high withstanding voltage capability for up to 25V, which makes it suitable for applications of such voltage range. It also has a wide temperature range and provides high reliability with very low leakage current.
As a semiconductor device, the IXFN120N25 can work independently or be combined with the other components to construct circuit assemblies to enable it to perform a certain task. It comprises two distinct parts, namely the gate and the source. The gate acts as a switch, controlling the flow of current through the source and the drain, while the source is a terminal in the connection with the current, thus providing the current.
In terms of its basic workings, the IXFN120N25 works on the principle of an N-channel. This refers to the presence of the N-type channel between the source and the gate that helps in controlling the flow of current. When a gate is charged with a positive voltage, it helps create an inversion channel between the source and the gate, which then allows the current to flow through the drain.
The current is controlled by applying and applying the negative voltage on the gate. Similarly, when the negative voltage is applied on the gate, it induces an inversion layer in the channel, and the current is blocked from passing through the drain. This allows the IXFN120N25 to control the current by controlling the voltage of the gate and thus making it suitable for applications that require high current.
As mentioned, the IXFN120N25 is mostly used in applications that require high current and low on-states resistance. It is highly suitable for switching appliances such as electric motors, fans, motors, blowers and lighting fixtures. This type of power transistor is also used in replacing discrete power switching components in consumer appliances like air conditioners.
Apart from consumer appliances, the IXFN120N25 is widely used in automotive industry and in various industrial applications. There are various types of IXFN120N25 available based on the ratings and voltage level. Thus, it is important to choose the right type of transistor according to the application.
In conclusion, the IXFN120N25 is a high power N-channel enhancement mode field effect transistor that is suitable for switching high current loads. Its features like low RON and high voltage capability makes it suitable for various applications in consumer, automotive and industrial sectors. Thus, it is widely used for controlled switching operations.
The specific data is subject to PDF, and the above content is for reference
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