IXFN44N80

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The IXFN44N80 is a power Field Effect Transistor (FET) manufactured by IXYS. It is part of the company’s IXFF family of Silicon Double Diffused MOSFETs, which are specifically designed for high-current, high-speed switching applications. In this article, we will discuss the IXFN44N80’s application field, working principle, and features.

Application Field of the IXFN44N80

The IXFN44N80 is designed for high-current and high-speed switching applications for a variety of industries. It is particularly well-suited to applications that require reliable, fast on-off switches, such as automotive, industrial, and power supply applications. For example, the IXFN44N80 can be used in applications that require energy transfer such as DC-DC converters, motor drives, and UPS systems. Additionally, IXYS also recommends the IXFN44N80 for use in other power applications, including AC/DC, DC/DC converters, UPS, solar power inverters, and renewable energy systems.

Working Principle of the IXFN44N80

The IXFN44N80 is a N-Channel enhancement-mode MOSFET. It is a power FET that operates by controlling the width of a metallic conducting channel that is sandwiched between a source and a drain. When the gate to source voltage (Vgs) is greater than the threshold voltage (Vt), the width of the conducting channel increases, allowing electrons to flow through the device. This effectively switches the device on, enabling current flow. When the gate voltage falls below the threshold voltage, the width of the conducting channel decreases until it becomes zero, which effectively switches the device off, stopping current flow. The IXFN44N80 also has an integrated Over-Temperature Protection (OTP) circuit which helps to provide reliable operation and protection against thermal errors.

Features of the IXFN44N80

The IXFN44N80 offers a wide range of features to support its range of applications. Firstly, it has a maximum drain source voltage of 800V, which makes it ideal for high voltage applications. Secondly, it features an on resistance of Rds(on) of 44mΩ at 10V, allowing for fast and efficient switching. Thirdly, it also has low gate charge and gate resistance, allowing for more efficient power consumption. Additionally, it has a low threshold voltage of 2.2V, making it suitable for use in low voltage applications. Finally, it has an integrated OTP circuit for reliable and safe operation.

In conclusion, the IXFN44N80 is a power FET manufactured by IXYS for high-current, high-speed switching applications. It is designed for use in a variety of industries, such as automotive, industrial and power supply applications. Its working principle is based on controlling the width of a metallic conducting channel, and it features a range of benefits, including a maximum drain source voltage of 800V, an on resistance of 44mΩ, and a low threshold voltage of 2.2V. Finally, it has an integrated OTP circuit for reliable operation.

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