
Allicdata Part #: | IXFN80N50Q3-ND |
Manufacturer Part#: |
IXFN80N50Q3 |
Price: | $ 31.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 63A SOT-227 |
More Detail: | N-Channel 500V 63A (Tc) 780W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 14 |
1 +: | $ 28.21140 |
10 +: | $ 26.09590 |
100 +: | $ 22.28750 |
Vgs(th) (Max) @ Id: | 6.5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFN80N50Q3 are an advanced type of power transistor, part of the family of field-effect transistors. They are most often used in switching power applications as well as amplifying, frequency conversion and filtering applications. The IXFN80N50Q3 is a MOSFET (metal oxide semiconductor field-effect transistors) device, a type of transistor commonly used due to the low-level switching capabilities it brings. It consists of an insulated gate that controls the flow of current between the source and the drain.
The IXFN80N50Q3 are specifically designed for high-frequency power conversion in the 600V and 400V N/P-channel optimized on-resistance range. The MOS gate cell paired with an optimized profile design, makes this transistor suitable for high-frequency motor drivers, LV motor drives, UPS, and DC/DC converters. The IXFN80N50Q3 also has an improved body diode behaviour making it suitable for applications that require reliable, high-speed switching.
The IXFN80N50Q3 is a computed enhanced uni-polar transistor based on a MOS architecture. It is manufactured using a new process design and materials to ensure superior electrical performance in the most demanding applications. It features very low on-resistance and gate charge characteristics with an optimized RDS(on).
The IXFN80N50Q3\'s working principle is based on the charge stored in the inversion layer at the interface between the metal gate and the semiconductor. When a voltage is applied between the gate and the source, a charge will flow between the source and the drain, which causes the MOS to conduct, allowing current to flow. This voltage required to switch the MOSFET is known as the gate-threshold voltage. If the gate voltage is lowered, the MOSFET will turn off. The IXFN80N50Q3 can easily be controlled using a digital IC, making it a great choice for low-power applications.
The IXFN80N50Q3 is a great choice for power applications causing low power consumption and operating temperature as well as improved efficiency due to its low RDS(on) and optimized switching frequency. Additionally, its fast switching capability makes it easy to control when used in motor applications. Because of these features and its low cost, the IXFN80N50Q3 has become a popular choice for many modern power applications.
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