IXGA12N120A2 Allicdata Electronics
Allicdata Part #:

IXGA12N120A2-ND

Manufacturer Part#:

IXGA12N120A2

Price: $ 1.51
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 24A 75W TO263
More Detail: IGBT PT 1200V 24A 75W Surface Mount TO-263 (IXGA)
DataSheet: IXGA12N120A2 datasheetIXGA12N120A2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 1.37264
Stock 1000Can Ship Immediately
$ 1.51
Specifications
Power - Max: 75W
Base Part Number: IXG*12N120
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 12A, 100 Ohm, 15V
Td (on/off) @ 25°C: 15ns/680ns
Gate Charge: 24nC
Input Type: Standard
Switching Energy: 5.4mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs, or insulated gate bipolar transistors, are integrated semiconductor devices that feature both a bipolar transistor, or BJT, and a MOSFET. These devices are widely used in various applications such as motor control, switching power supplies, and inverters. The IXGA12N120A2 is a single IGBT from IXYS. This article will discuss the application field and working principle of the IXGA12N120A2.

Application Field of IXGA12N120A2

The IXGA12N120A2 is a medium-power IGBT intended for light industrial, consumer, and automotive applications. It is characterized by an enhanced package optimized for low losses and is designed to replace RJK06524V, the RJP PIM line by ROHM Semiconductor. The device is suitable for applications such as adjustable speed drives, UPS systems, welding equipment, motor control, switching power supplies, and motor control.

It features an operating junction temperature range of -40°C to 150°C and a collector current capability of up to 24A. It has a collector-emitter voltage of 1200V, and is capable of withstanding a maximum reverse avalanche energy of up to 6mJ. Its ruggedized IGBT constructions incorporates both a MOSFET and a bipolar transistor.

Working Principle of IXGA12N120A2

The IXGA12N120A2 is a single IGBT device comprising of both MOSFET and a BJT structures. The device works on a principle of two parallel channels—an IGBT and a diode. It uses a single gate control terminal to switch on the IGBT channel as a latch, changing it from a non-conducting to conducting state when a positive gate voltage is applied. The turn-on process also activates the integrated freewheeling diode, which allows current to flow in the opposite direction when the IGBT is turned off.

At the same time, when the gate voltage is switched off, the IGBT channel switches off, thus allowing the diode to protect the circuit from any reverse voltages. As per the working principle of the IXGA12N120A2, it can be seen that the IGBT serves as an excellent switch, providing high-frequency switching with low losses, while the integrated freewheeling diode makes the device very efficient and reliable as it can prevent any unwanted reverse voltages.

Conclusion

The IXGA12N120A2 is a single IGBT device from IXYS. It is mostly used in applications like adjustable speed drives, UPS systems, welding equipment, motor control, switching power supplies, and motor control. The device works on a principle of two parallel channels—an IGBT and a diode. The IGBT serves as a switch and the diode protects the circuit from any reverse voltages. Overall, the IXGA12N120A2 provides excellent high-frequency switching with low losses and is ideal for light industrial, consumer, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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