IXGA24N60C Allicdata Electronics

IXGA24N60C Discrete Semiconductor Products

Allicdata Part #:

IXGA24N60C-ND

Manufacturer Part#:

IXGA24N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 48A 150W TO263AA
More Detail: IGBT 600V 48A 150W Surface Mount TO-263 (IXGA)
DataSheet: IXGA24N60C datasheetIXGA24N60C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 150W
Base Part Number: IXG*24N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 15ns/75ns
Gate Charge: 55nC
Input Type: Standard
Switching Energy: 240µJ (off)
Series: HiPerFAST™, Lightspeed™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Current - Collector Pulsed (Icm): 96A
Current - Collector (Ic) (Max): 48A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGA24N60C is a single IGBT device designed to provide performance and extended temperature operation over a wide range of practical applications. IGBT stands for Insulated Gate Bipolar Transistor, which is a power semiconductor device used in a variety of different applications. It is a four-layer device that combines the properties of both a MOSFET and a BJT to achieve better switching performance.

The main advantages offered by the IXGA24N60C are its low conduction loss, high Speed switching and extended temperature operation. It is capable of withstanding voltages as high as 600V and offers a maximum collector current of 7.2A. This makes the IXGA24N60C ideal for applications requiring fast switching and high current, such as motor control, power conversion and UPS systems.

In terms of structure, the IXGA24N60C consists of a vertical n-channel insulated gate bipolar transistor layer, an n-channel vertical MOSFET layer and a lateral p-channel MOSFET layer. Each layer is connected to each other to form a vertical device structure.

The operation of the IXGA24N60C is based on the principle of charge-balanced turning on and off. When the Gate signal is high, current is passed from the collector to the emitter and the transistor is in an ON state, with it in an OFF state when the Gate signal is low. When the base terminal has a certain voltage and the Gate terminal is driven high by an appropriate Gate signal, the transistor is driven ON, thereby providing a low voltage drop across the collector-emitter terminals.

The IXGA24N60C is also capable of achieving very high speed switching, with the typical turn-on and turn-off times being 6 μs and 60 ns respectively. This makes the IXGA24N60C an ideal choice for high frequency applications, such as switching power supplies.

In addition, the IXGA24N60C also has a high frequency capability, with the typical switching frequency being 100 kHz. This allows the use of this component in high frequency applications, such as in motor control and high speed switching circuits. It also offers protection from over-current and over-voltage conditions.

Overall, the IXGA24N60C is a very versatile component, offering a range of features that makes it suitable for a variety of applications. It is ideal for use in motor control, power conversion, UPS systems and high frequency circuits, making it a great choice for a number of applications.

The specific data is subject to PDF, and the above content is for reference

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