IXGA30N60C3D4 Allicdata Electronics
Allicdata Part #:

IXGA30N60C3D4-ND

Manufacturer Part#:

IXGA30N60C3D4

Price: $ 2.70
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 220W TO263
More Detail: IGBT PT 600V 60A 220W Surface Mount TO-263 (IXGA)
DataSheet: IXGA30N60C3D4 datasheetIXGA30N60C3D4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 2.45587
Stock 1000Can Ship Immediately
$ 2.7
Specifications
Power - Max: 220W
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 60ns
Test Condition: 300V, 20A, 5 Ohm, 15V
Td (on/off) @ 25°C: 16ns/42ns
Gate Charge: 38nC
Input Type: Standard
Switching Energy: 270µJ (on), 90µJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGA30N60C3D4 has a wide range of applications and working principles, making it a versatile device stack for a variety of needs. This section will focus on how the IXGA30N60C3D4 falls into the category of transistors specifically, in the area of IGBTs, and how it can work as a single.

When it comes to understanding transistors, they are a type of electronic component that regulates current or voltage flow and can act as switches, amplifiers, and oscillators, depending on their requirements. IGBTs, in particular, are like conventional bipolar junction diodes, but are designed to operate at higher voltages and frequencies compared to other types of transistors.

The IXGA30N60C3D4 falls into the category of IGBTs and can be effectively used as a single. It has a total drain current rating at Tc=25°C of 30 A and a continuous load current of 12A. In terms of its power dissipation, depending on the temperature it is exposed to, it can have a maximum rating of 400 W at 25°C and 200 W at 175°C. The voltage ratings are 600 V and its operating temperature can range from -40°C to 175°C.

When it comes to its application field, it can be used in applications where both energy savings is a priority and operations remain reliable, such as in power supplies, UPSs, motor controls, and more. It can also be used in other applications such as solar power inverters, electric traction converters, DC drives, aviation control systems, and consumer electronics.

The working principle of the IXGA30N60C3D4 is based on its IGBT structure. An IGBT is a combination of an insulated gate FET and a bipolar junction transistor, and its structure is designed to provide the fast switching of an FET, but with the breakdown voltage of the BJT. The IGBT structure requires two signals to be conducted, namely a gate signal and an emitter signal. The gate signal is responsible for the conduction of the main voltage, while the emitter signal is responsible for the conduction of the body voltage. When these two signals are properly combined, they provide an efficient way to switch and regulate current flow.

The IXGA30N60C3D4 is an efficient type of IGBT that is designed to operate at high voltages and frequencies with a wide range of applications and reliable operation. It is well suited for power supplies, ups systems, motor controls, and any other application that requires efficient switching or high performance. By utilizing its IGBT structure and two combined signals, current flow can be effectively regulated and switched with minimal power loss.

The specific data is subject to PDF, and the above content is for reference

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