IXGA20N120B3

IGBTs are insulated gate bipolar transistors that use a combination of both bipolar junction transistor and field-effect transistor technology. They are used for switching applications and for providing high-power amplification. The IXGA20N120B3 is a single IGBT with a maximum current rating of 20A and a maximum voltage rating of 1200V. This article will discuss the application field and working principle of IXGA20N120B3.

Application Field

IXGA20N120B3 can be used in a variety of applications including the following:

• Power converters
• Uninterruptible power supplies
• Automotive applications, such as electric and hybrid vehicles
• Industrial motor drives
• Aerospace control systems

In these applications, IXGA20N120B3 can be used to switch relatively large currents and voltages. In particular, it is well suited for use in applications where high efficiency is important, such as power converters and uninterruptible power supplies.

Working Principle

The working principle of IXGA20N120B3 is based on the combination of bipolar junction transistor and field-effect transistor technologies. In an IGBT, a gate-controlled avalanche-resistant layer is formed between two emitter-base junctions. This avalanche-resistant layer allows an IGBT to be operated in either blocking or conducting mode. When the gate-controlled layer is forward biased, current is able to flow from the emitter to the collector. This is the conducting mode. When the gate-controlled layer is reverse biased, current is blocked from the emitter to the collector and the IGBT is in the blocking mode.

In order for IXGA20N120B3 to switch from blocking to conducting mode or vice versa, the gate voltage must be changed. When the gate voltage is applied, the avalanche-resistant layer is forward biased and current can flow from the emitter to the collector, thus allowing the IGBT to switch rapidly and accurately.

Conclusion

IXGA20N120B3 is a single IGBT with a maximum current rating of 20A and a maximum voltage rating of 1200V. It can be used in a variety of applications, such as power converters, uninterruptible power supplies, automotive applications, and industrial motor drives. Its working principle is based on the combination of bipolar junction transistor and field-effect transistor technologies.