IXGA28N60A3 Allicdata Electronics
Allicdata Part #:

IXGA28N60A3-ND

Manufacturer Part#:

IXGA28N60A3

Price: $ 2.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT
More Detail: IGBT PT 600V 75A 190W Surface Mount TO-263
DataSheet: IXGA28N60A3 datasheetIXGA28N60A3 Datasheet/PDF
Quantity: 1000
50 +: $ 1.93486
Stock 1000Can Ship Immediately
$ 2.13
Specifications
Input Type: Standard
Supplier Device Package: TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 26ns
Test Condition: 480V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 18ns/300ns
Gate Charge: 66nC
Series: GenX3™
Switching Energy: 700µJ (on), 2.4mJ (off)
Power - Max: 190W
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Current - Collector Pulsed (Icm): 170A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Part Status: Active
Description

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Integrated Gate Commutated Thyristors (IGCTs) are devices used for high-power switching applications in industrial, commercial and communications applications. The IXGA28N60A3 is a high-performance MOSFET technology-based IGBT device that is suitable for use in applications such as motor control, solar power inverters and UPS systems. It is rated at 28 Amps and 600 Volts.

The IXGA28N60A3 is a three-terminal device that may be used as an electronically controlled switch in circuits. It has an electrically isolated gate configured with two insulated gate electrodes providing an output current of 28 amps at 600 volts. It is also designed with a high-voltage terminal gate and low voltage gate dual-injection structure that provides maximum switching Energy.

The IXGA28N60A3 has an extended voltage range of -40 Volts to 600 Volts. It is a non-polar device meaning it has no polarity requirements for power supply, allowing for easy design and implementation for various applications. It also features improved gate charge characteristics which allows for faster switching. The device has a minimum On-state current of 300mA and an OFF-state voltage of 25μA. The IXGA28N60A3 is designed with a dielectric isolation barrier to prevent electrical breakdown.

The IXGA28N60A3 is used in a variety of applications, including electro-mechanical control, industrial automation, solar energy conversion and UPS systems. It has a robust, reliable construction which provides superior performance in difficult and harsh environments. It is also suitable for use in AC and DC switching applications, making it ideal for various applications. In addition to its high-voltage and current ratings, the IXGA28N60A3 is also designed for high-speed switching, allowing for quick response times.

The working principle of the IXGA28N60A3 is based on the field-effect transistor (FET) structure. The device has an insulated gate electrode (IGE) connected to the gate terminal. The gate voltage applied to the device’s gate terminal causes an electric field to be formed across the two insulated gate electrodes, thus controlling the current flow through the device. When the gate voltage is low, the current flow is blocked and the device acts as an open switch. When the gate voltage is high, the current is allowed to flow through the device, thus acting as a closed switch.

The IXGA28N60A3 is a versatile device with a wide range of applications and can be used in a variety of industries. It is a reliable, robust and efficient device with a high-performance rating for various applications. In addition to its features, the IXGA28N60A3 also has a cost-effective design which makes it an ideal choice for any application.

The specific data is subject to PDF, and the above content is for reference

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