IXGA36N60A3

Input Type:	Standard
Supplier Device Package:	TO-263AA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	23ns
Test Condition:	400V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C:	18ns/330ns
Gate Charge:	80nC
Series:	GenX3™
Switching Energy:	740µJ (on), 3mJ (off)
Power - Max:	220W
Vce(on) (Max) @ Vge, Ic:	1.4V @ 15V, 30A
Current - Collector Pulsed (Icm):	200A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Part Status:	Active

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Introduction

IXGA36N60A3 is a single type of IGBTs, which belongs to transistors. It is produced by IXYS. This device is designed to provide high level of performance and reliability in commercial, general purpose and automotive applications. The IXGA36N60A3 combines the high-speed switching of an IGBT with the low ON-state losses of a MOSFET device which makes it suitable for high-power applications.

Features

The IXGA36N60A3 is optimized for low conduction and switching losses and high blocking voltage capabilities. This device uses patented planar rectangular gate cell technology, which gives it excellent switching performance and enhanced gate drive strength. It also comes with an internal clamping circuit which limits the maximum collector-emitter voltage. The IXGA36N60A3 is a 600V device and is compatible with standard 6 lead TO-247 packages.

Applications

The IXGA36N60A3 is well suited for a wide range of applications such as motor drives, high power supplies, server power systems, and solar inverters. It is also suitable for UPS systems, resonant converters, and motor control systems.

Working Principle

The working principle of the IXGA36N60A3 is quite straightforward. It is an IGBT, which essentially combines an insulated gate bipolar transistor (IGBT) with an insulated gate field-effect transistor (IGFET). The IGCT is used to control the current flowing through the collector-base junction while the IGFET is used to control the voltage at the base of the IGBT.When the base voltage of the IGBT is less than 0.8V, the device is in the OFF-state and no current is flowing through the collector-emitter junction. If the voltage at the base increases above 0.8V, the device will turn ON and current will flow through the collector-emitter junction. The switching characteristics of the device can be modified by adjusting the gate voltage.

Conclusion

The IXGA36N60A3 is a single type IGBTs, which belongs to transistors. It is designed to provide high levels of performance and reliability in commercial, general purpose and automotive applications. Thanks to its patented planar rectangular gate cell technology, the device has excellent switching performance and gate drive strength. It is also suitable for a wide range of applications such as motor drives, high power supplies, server power systems, and solar inverters. Its working principle relies on the combination of an IGBT and an IGFET.

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