IXGA12N60B Allicdata Electronics
Allicdata Part #:

IXGA12N60B-ND

Manufacturer Part#:

IXGA12N60B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 24A 100W TO263AA
More Detail: IGBT 600V 24A 100W Surface Mount TO-263 (IXGA)
DataSheet: IXGA12N60B datasheetIXGA12N60B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 100W
Base Part Number: IXG*12N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C: 20ns/150ns
Gate Charge: 32nC
Input Type: Standard
Switching Energy: 500µJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGA12N60B is a single high-voltage insulated gate bipolar transistor (IGBT) designed for applications that require a high voltage level. It has a rated blocking voltage of 1200V and is suitable for blocking, switching, and boosting applications. The IXGA12N60B is ideal for a wide range of applications such as motor drives, UPS inverters, AC/DC converters, inverter welding machines, or renewable energy systems.

The IXGA12N60B is built with a zero-voltage-switching (ZVS) control structure and is optimized for superior efficiency and thermal performance. The device has an integrated anti-parallel free-wheeling diode that helps to reduce conduction losses. The IXGA12N60B also uses a novel gate driver design to reduce its dynamic losses, ensure a soft turn-on and turn-off, and is highly immune to electrical noise.

The IXGA12N60B works by using bipolar junction transistors (BJTs) on both its emitter and collector circuits. When voltage is applied to the gate, it creates a hole-electron vacuum that creates a conductive path between the emitter and collector. This conducts current between the emitter and collector and switches the device on. When voltage is removed from the gate, the vacuum is broken and the device turns off.

The IXGA12N60B is also designed to minimize switching loss and noise. It employs a unique suppression cell design that helps to minimize EMI emission. The device also features an advanced gate driver, which allows for a premagnetization and zero-voltage-switching control scheme for rapid and low-loss switching.

The IXGA12N60B is the ideal device for high-voltage applications that require high power efficiency, improved thermal performance, and low noise. Its ZVS control structure ensures superior noise immunity and superior efficiency compared to other same-voltage devices. Its integrated anti-parallel freewheeling diode also helps reduce conduction losses. Moreover, the advanced gate driver design helps minimize dynamic losses, ensure soft turn-on and turn-off, and improve noise immunity.

The specific data is subject to PDF, and the above content is for reference

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