IXGA30N120B3 Allicdata Electronics
Allicdata Part #:

IXGA30N120B3-ND

Manufacturer Part#:

IXGA30N120B3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 60A 300W TO263
More Detail: IGBT PT 1200V 60A 300W Surface Mount TO-263 (IXGA)
DataSheet: IXGA30N120B3 datasheetIXGA30N120B3 Datasheet/PDF
Quantity: 65
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 65Can Ship Immediately
Specifications
Power - Max: 300W
Base Part Number: IXG*30N120
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 16ns/127ns
Gate Charge: 87nC
Input Type: Standard
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGA30N120B3 is a high-performance insulated gate bipolar transistor (IGBT) from IXYS Corporation. It is used in a variety of power switching applications, such as motor control, uninterruptible power supplies, DC/DC converters, and solar inverters. It is a reliable, efficient, and cost-effective solution for medium to high voltage applications.

The IXGA30N120B3 belongs to the IGBTs – Single Transistors family. It is constructed of a monolithic chip body that contains an integral insulated gate field effect (IGFET) power MOSFET and a bipolar power transistor. This type of device is commonly used in switching circuits due to its ability to provide both low on-state resistance (R(DSon)) and high levels of switching performance. Its high voltage capability and low loss characteristics have made it a popular choice for the power electronics market.

The device features a maximum collector-emitter voltage of 1200V, with a collector-emitter breakdown voltage of 1200V. It has a collector-emitter saturation voltage of 1.1V at a current of 3A and an on-state resistance of 0.025Ω. Its maximum operating frequency of 2 MHz makes it suitable for high-frequency switching applications such as AC-DC, DC-DC, and AC-AC conversion. It also features a package to pad creepage distance of 10 mm and a thermal resistance junction-to-case of 4 °C/W.

In terms of its working principle, the IXGA30N120B3 operates in two different modes: linear mode and saturation mode. In linear mode, it functions as a voltage-controlled current source, allowing current to flow through the device in both directions. In saturation mode, it functions as a current-controlled current source, limiting the flow of current in one direction. When used in a power switching application, the IXGA30N120B3 offers a fast turn-on and short circuit protection, making it ideal for high current applications.

The IXGA30N120B3 offers a variety of applications in several industries, including automotive, renewable energy, and industrial applications. Automotive applications include electric vehicle power management, motor drives, and vehicle energy efficiency systems. Renewable energy applications include solar inverters, wind turbine conversion systems, and integrated electric power systems. In industrial applications, it can be used for motor control and servo drives, as well as in DC/DC and AC/DC converters.

The IXGA30N120B3 is a reliable and cost-effective solution for medium to high voltage applications that require a fast switching speed and protection from short circuits and surges. Its high-performance insulation gate bipolar transistor characteristics, as well as its wide operating range and high voltage capability, make it an excellent choice for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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