IXGA16N60C2

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IXGA16N60C2 Application field and Working Principle

The IXGA16N60C2 is a single IGBT that belongs to the IXGI family of Insulated Gate Bipolar Transistors (IGBT) from IXYS Corporation.

IGBTs have been the preferred power semiconductor choice for a wide range of applications due to their high output power, low on-state voltage drop and fast switching speed. The IXGA16N60C2 is no exception, making it an ideal device for high-power applications, such as automotive powertrains and power tools, as well as for renewable energy systems, telecommunications and industrial motor control.

The IXGA16N60C2 is a single IGBT with a maximum collector emitter voltage of 600V and a continuous collector current of 16A. The device features a design optimized for fast switching with a typical turn-on duration of 50ns, while its maximum switching frequency of 30kHz makes it suitable for applications requiring high power cycling. Additionally, the IXGA16N60C2 also features an internal clamp diode, which simplifies the drive design.

Regarding its internal structure, the IXGA16N60C2 consists of two components: the body and the gate. The body is constructed from a PNPN three-layer epitaxial structure, which is thermally isolated from the copper tab collector. This structure not only offers superior electrical characteristics, but also allows for improved heat transfer. On the other hand, the gate utilizes a high-performance low-resistance metal layer that reduces the turn-on losses associated with other IGBTs.

The ISXGA16N60C2 device works in a similar manner to other IGBTs, using the application of voltage between the gate and the collector to control the body. When a positive voltage is used, current is able to flow from the collector to the emitter, establishing a low on-state voltage drop. On the other hand, when a negative voltage is applied, the gate and emitter are reversed and the device works in a blocking mode, preventing current from flowing. This mode of operation offers the best of both worlds, providing the high current output of a power transistor with the precise control of a MOSFET.

In conclusion, the IXGA16N60C2 from IXYS Corporation is an excellent choice for high power applications due to its high collector current, low on-state voltage drop and fast switching speed. Its internal clamp diode also simplifies the drive circuit design, while its robust construction ensures reliability and promises long device life.

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